LM3S2U93 Datasheet, PDF (320/1200 Pages) Texas Instruments – Stellaris® LM3S2U93 Microcontroller

Internal Memory
Important: To ensure proper operation, two writes to the same word must be separated by an
ERASE. The following two sequences are allowed:
■ ERASE -> PROGRAM value -> PROGRAM 0x0000.0000
■ ERASE -> PROGRAM value -> ERASE
The following sequence is NOT allowed:
■ ERASE -> PROGRAM value -> PROGRAM value
7.2.3.5
To perform an erase of a 1-KB page
1. Write the page address to the FMA register.
2. Write the Flash memory write key and the ERASE bit (a value of 0xA442.0002) to the FMC
register.
3. Poll the FMC register until the ERASE bit is cleared or, alternatively, enable the programming
interrupt using the PMASK bit in the FCIM register.
To perform a mass erase of the Flash memory
1. Write the Flash memory write key and the MERASE bit (a value of 0xA442.0004) to the FMC
register.
2. Poll the FMC register until the MERASE bit is cleared or, alternatively, enable the programming
interrupt using the PMASK bit in the FCIM register.
32-Word Flash Memory Write Buffer
A 32-word write buffer provides the capability to perform faster write accesses to the Flash memory
by concurrently programing 32 words with a single buffered Flash memory write operation. The
buffered Flash memory write operation takes the same amount of time as the single word write
operation controlled by bit 0 in the FMC register. The data for the buffered write is written to the
Flash Write Buffer (FWBn) registers.
The registers are 32-word aligned with Flash memory, and therefore the register FWB0 corresponds
with the address in FMA where bits [6:0] of FMA are all 0. FWB1 corresponds with the address in
FMA + 0x4 and so on. Only the FWBn registers that have been updated since the previous buffered
Flash memory write operation are written. The Flash Write Buffer Valid (FWBVAL) register shows
which registers have been written since the last buffered Flash memory write operation. This register
contains a bit for each of the 32 FWBn registers, where bit[n] of FWBVAL corresponds to FWBn.
The FWBn register has been updated if the corresponding bit in the FWBVAL register is set.
To program 32 words with a single buffered Flash memory write operation
1. Write the source data to the FWBn registers.
2. Write the target address to the FMA register. This must be a 32-word aligned address (that is,
bits [6:0] in FMA must be 0s).
3. Write the Flash memory write key and the WRBUF bit (a value of 0xA442.0001) to the FMC2
register.
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January 23, 2012
Texas Instruments-Production Data