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LMH2110 Datasheet, PDF (3/33 Pages) National Semiconductor (TI) – 8 GHz Logarithmic RMS Power Detector with 45 dB Dynamic Range
LMH2110
www.ti.com
SNWS022C – JANUARY 2010 – REVISED MARCH 2013
2.7V and 4.5V DC and AC Electrical Characteristics
Unless otherwise specified: all limits are ensured to; TA = 25°C, VBAT = 2.7V and 4.5V (worst of the 2 is specified), RFIN =
1900 MHz CW (Continuous Wave, unmodulated). Boldface limits apply at the temperature extremes (1).
Symbol
Parameter
Condition
Min
(2)
Typ
(3)
Max
(2)
Units
Supply Interface
IBAT
Supply Current
Active mode: EN = High, no signal
present at RFIN.
3.7
2.9
4.8
5.5
5.9
mA
Shutdown: EN = Low,
no signal present at
RFIN.
VBAT= 2.7V
VBAT= 4.5V
3.7
4.7
5
μA
4.6
5.7
6.1
EN = Low, RFIN = 0
dBm, 1900 MHz
VBAT= 2.7V
VBAT= 4.5V
3.5
4.7
5
μA
4.6
5.7
6.1
PSRR
Power Supply Rejection Ratio
(4)
RFIN = −10 dBm, 1900 MHz,
2.7V<VBAT<5V
45
56
dB
Logic Enable Interface
VLOW
EN Logic Low Input Level
(Shutdown mode)
0.6
V
VHIGH
EN Logic High Input Level
IEN
Current into EN Pin
Input / Output Interface
1.1
V
50
nA
RIN
VOUT
Input Resistance
Minimum Output Voltage
(Pedestal)
No input Signal
44
50
56
Ω
0
1.5
8
mV
ROUT
Output Impedance
EN = High, RFIN = -10 dBm, 1900 MHz,
ILOAD = 1 mA, DC measurement
0.2
2
3
Ω
IOUT
Output Short Circuit Current
Sinking, RFIN = -10 dBm, OUT
connected to 2.5V
37
32
42
mA
Sourcing, RFIN = -10 dBm, OUT
connected to GND
40
34
46
IOUT,SD
Output Leakage Current in
Shutdown mode
EN = Low, OUT connected to 2V
50
nA
en
Output Referred Noise
(4)
RFIN = −10 dBm, 1900 MHz, output
spectrum at 10 kHz
3
µV/√Hz
vN
Integrated Output Referred Noise Integrated over frequency band
(4)
1 kHz - 6.5 kHz, RFIN = -10 dBm, 1900
210
MHz
µVRMS
Timing Characteristics
tON
Turn-on Time from shutdown
RFIN = -10 dBm, 1900 MHz, EN Low-
High transition to OUT at 90%
15
19
µs
tR
Rise Time
(4)
Signal at RFIN from -20 dBm to 0 dBm,
10% to 90%, 1900 MHz
2.2
µs
tF
Fall Time
(4)
Signal at RFIN from 0 dBm to -20 dBm,
90% to 10%, 1900 MHz
31
µs
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensurance of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
(2) All limits are specified by test or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped
production material.
(4) This parameter is specified by design and/or characterization and is not tested in production.
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