DS90LV049Q Datasheet, PDF (3/14 Pages) Texas Instruments – DS90LV049Q Automotive LVDS Dual Line Driver and Receiver Pair

Absolute Maximum Ratings (Note 4)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_DD)
LVCMOS Input Voltage (D_IN)
LVDS Input Voltage (R_IN+, R_IN-)
Enable Input Voltage (EN, EN)
LVCMOS Output Voltage (R_OUT)
LVDS Output Voltage
(D_OUT+, D_OUT-)
LVCMOS Output Short Circuit
Current (R_OUT)
LVDS Output Short Circuit
Current (D_OUT+, D_OUT−)
LVDS Output Short Circuit
Current Duration(D_OUT+, D_OUT−)
Storage Temperature Range
Lead Temperature Range
Soldering (4 sec.)
Maximum Junction Temperature
−0.3 V to +4 V
−0.3 V to (V_DD + 0.3 V)
−0.3 V to +3.9 V
−0.3 V to (V_DD + 0.3 V)
−0.3 V to (V_DD + 0.3 V)
−0.3 V to +3.9 V
100 mA
24 mA
Continuous
−65°C to +150°C
+260°C
+135°C
Maximum Package Power Dissipation @ +25°C
MT Package
1146 mW
Derate MT Package
10.4 mW/°C above +25°C
Package Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC)
 θ_JA
 θ_JC
ESD Rating
96.0°C/W
30.0°C/W
HBM (Note 1)
MM (Note 2)
CDM (Note 3)
≥ 8 kV
≥ 250 V
≥ 1250 V
Note 1: Human Body Model, applicable std. JESD22-A114C
Note 2: Machine Model, applicable std. JESD22-A115-A
Note 3: Field Induced Charge Device Model, applicable std.
JESD22-C101-C
Recommended Operating
Conditions
Supply Voltage (V_DD)
Operating Free Air
Temperature (T_A)
Min Typ Max
+3.0 +3.3 +3.6
−40 +25 +125
Units
V
°C
Electrical Characteristics
Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 5, 7, 9)
Symbol
Parameter
Conditions
Pin Min
LVCMOS Input DC Specifications (Driver Inputs, ENABLE Pins)
V_IH
Input High Voltage
V_IL
Input Low Voltage
I_IH
Input High Current
V_IN = V_DD
I_IL
Input Low Current
V_IN = GND
V_CL
Input Clamp Voltage
I_CL = −18 mA
LVDS Output DC Specifications (Driver Outputs)
2.0
D_IN
GND
EN
−10
EN
−10
−1.5
| V_OD |
ΔV_OD
V_OS
ΔV_OS
Differential Output Voltage
Change in Magnitude of V_OD for
Complementary Output States
Offset Voltage
Change in Magnitude of V_OS for
Complementary Output States
R_L = 100 Ω
(Figure 1)
250
1.125
I_OS
Output Short Circuit Current (Note ENABLED,
17)
D_IN = V_DD, D_OUT+ = 0 V or
D_IN = GND, D_OUT− = 0 V
I_OSD
Differential Output Short Circuit
Current (Note 17)
ENABLED, V_OD = 0 V
D_OUT−
D_OUT+
I_OFF
Power-off Leakage
V_OUT = 0 V or 3.6 V
−20
V_DD = 0 V or Open
I_OZ
Output TRI-STATE Current
EN = 0 V and EN = V_DD
−10
V_OUT = 0 V or V_DD
Typ
1
−0.1
−0.6
350
1
1.23
1
−5.8
−5.8
±1
±1
Max
V_DD
0.8
+10
+10
450
35
1.375
25
−9.0
−9.0
+20
+10
Units
V
V
μA
μA
V
mV
|mV|
V
|mV|
mA
mA
μA
μA
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