DS16F95_16 Datasheet, PDF (3/16 Pages) Texas Instruments – DS16F95, DS36F95 EIA-485/EIA-422A Differential Bus Transceiver

OBSOLETE
DS16F95, DS36F95
www.ti.com
SNLS392D – JUNE 1998 – REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings⁽¹⁾⁽²⁾
Storage Temperature Range
Lead Temperature (Soldering, 60 sec.)
Maximum Package Power Dissipation⁽³⁾ at 25°C
Supply Voltage
Input Voltage (Bus Terminal)
Enable Input Voltage
CDIP Package
SOIC Package
−65°C to +175°C
300°C
1300 mW
735 mW
7.0V
+15V/−10V
5.5V
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the devices should be operated at these limits. The tables of Electrical Characteristics provide conditions for actual device operation.
(2) Specifications for the 883 version of this product are listed separately on the following pages.
(3) Derate CDIP package 8.7 mW/°C above 25°C.Derate SOIC package 5.88 mW/°C above 25°C.
Recommended Operating Conditions
Supply Voltage (V_CC)
DS36F95
DS16F95
Voltage at Any Bus Terminal (Separately or Common Mode) (V_I or V_CM)
Differential Input Voltage (V_ID)
Output Current HIGH (I_OH)
Driver
Receiver
Output Current LOW (I_OL)
Driver
Receiver
Operating Temperature (T_A)
DS36F95
DS16F95
Min
Typ
Max
4.75
5.0
5.25
4.50
5.0
5.50
−7.0
+12
±12
−60
−400
60
16
0
+25
+70
−55
+25
+125
Units
V
V
V
V
mA
μA
mA
mA
°C
°C
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