TMS28F400BZB Datasheet, PDF (25/29 Pages) Texas Instruments – BOOT-BLOCK FLASH MEMORIES

TMS28F400BZT, TMS28F400BZB
524288 BY 8ĆBIT/262144 BY 16ĆBIT
BOOTĆBLOCK FLASH MEMORIES
SMJS400E − JUNE 1994 − REVISED JANUARY 1998
PARAMETER MEASUREMENT INFORMATION
Power Up
and
A _−1 −A17 Standby
(byte-wide)
A0 −A17
(word-wide)
Write
Erase-Setup
Command
tc( _{W )}
W
Write Erase-
Confirm
Command
Automated
Erase
tsu(A)
th(A)
Read Status-
Register Bits
Write
Read-Array
Command
tsu( _{W )}
th( _{W )}
G
E
DQ0 −DQ7
(byte-wide)
DQ0 −DQ15
(word-wide)
tw(EH)
tw(E)
tsu(D)
th(D)
Hi-Z
20h
trec(RPHE)
tc(E)ERB
tc(E)ERP
tc(E)ERM
D0h
Hi-Z
tsu(RP)
Valid SR
th(RP)
FFh
Hi-Z
RP
tsu( _VPP)2
th( _VPP)
VPP
Figure 11. Erase-Cycle Timing (E-Controlled Write)
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
25