MUX506 Datasheet, PDF (21/38 Pages) Texas Instruments – 36-V, Low-Capacitance, Low-Leakage-Current, Precision Analog Multiplexers

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MUX506, MUX507
SBAS803 – NOVEMBER 2016
7.8 Charge Injection
The MUX50x have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and
PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate
signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is
denoted by the symbol Q_INJ. Figure 32 shows the setup used to measure charge injection.
VDD
VSS
VDD
VSS
3V
VEN
0V
VOUT
QINJ = CL × V_OUT
VOUT
RS
VS
A0
A1
A2
A3
MUX506
S1
D
EN
GND
VEN
VOUT
CL
1 nF
Copyright © 2016, Texas Instruments Incorporated
Figure 32. Charge-Injection Measurement Setup
Copyright © 2016, Texas Instruments Incorporated
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