TC246 Datasheet, PDF (2/30 Pages) Texas Instruments – 680 x 500 PIXEL IMPACTRON™ COLOR CCD IMAGE SENSOR

TC246
SOCS096 – JULY 2010
www.ti.com
The TC246 sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase CCD (SGVPCCD) technology,
which provides devices with wide spectral response, high quantum efficiency (QE), low dark current, and high
response uniformity.
This MOS device contains limited built-in protection. During storage or handling, the device leads should be
shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be
connected to Vss. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid
shorting OUT to Vss during operation to prevent damage to the amplifier. The device can also be damaged if the
output and ADB terminals are reverse-biased and excessive current is allowed to flow. Specific guidelines for
handling devices of this type are contained in the publication "Electrostatic Discharge (ESD)" available from
Texas Instruments.
Attention to EMCCD users:
NOTE
The charge carrier multiplication (CCM) gain shift can be observed over a period of time.
As a results, a property fluctuation will occur under certain usage environment. In order to
minimize the change in characteristics with time, it is better not to use CCM gains beyond
necessity. Also exposing a sensor to a strong light source should be avoided.
2
Submit Documentation Feedback
Product Folder Link(s): TC246
Copyright © 2010, Texas Instruments Incorporated