TC246 Datasheet, PDF (1/30 Pages) Texas Instruments – 680 x 500 PIXEL IMPACTRON™ COLOR CCD IMAGE SENSOR

TC246
www.ti.com
SOCS096 – JULY 2010
680 x 500 PIXEL IMPACTRON™ COLOR CCD IMAGE SENSOR
Check for Samples: TC246
FEATURES
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• Very Low Noise, Very High Sensitivity,
Electronically Variable Charge Domain Gain
• 1/2-in Format, Solid State Charge-Coupled
Device (CCD) Frame Interline Transfer Color
Image Sensor for Low Light Level Applications
with 30 Frames/s or 60 Fields/s Readout Speed
• Color Mosaic Filters On Chip
• 340,000 Pixels per Field
• Frame Memory
• 658 (H) x 496 (V) Active Pixels in Image
Sensing Area
• Multimode Readout Capability
– Progressive Scan
– Pseudo-Interlace Scan
– Line Summing
– Pixel Summing
• 0-8 V Serial Operation Except CMG Gate
• Continuous Electronic Exposure Control from
1/30 s to 1/2,000 s
• Advanced Lateral Overflow Drain
• 10.0-µm Square Pixels
• Low Dark Current
• RoHS-Compliant Product
• High Photoresponse Uniformity Over a Wide
Spectral Range
• Solid State Reliability With No Image Burn-in,
Residual Imaging, Image Distortion, or
Microphonics
• Package with Built-in Peltier Cooler and
Temperature Sensor
DUAL-IN-LINE PACKAGE
(TOP VIEW)
DESCRIPTION
The TC246 is a frame interline transfer CCD image sensor designed for use in single-chip color NTSC TV,
computer, and special-purpose applications requiring low noise, high sensitivity, high speed, and low smear.
The TC246 is a new device of the IMPACTRON™ family of very-low noise, high sensitivity, high speed and low
smear sensors that multiply charge directly in the charge domain before conversion to voltage. The charge
carrier multiplication (CCM) is achieved by using a low-noise single-carrier, impact ionization process that occurs
during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed
gates activates the CCM. Multiplication gain is variable by adjusting the amplitude of the multiplication pulses.
The device function resembles the function of an image intensifier implemented in solid state.
The image-sensing area of the TC246 is configured into 500 lines with 680 pixels in each line. 20 pixels are
reserved in each line for dark reference. The blooming protection is based on an advanced lateral overflow drain
concept that does not reduce NIR response. The frame interline transfer from the image sensing area to the
memory area is implemented to minimize image smear. After charge is integrated and stored in the memory it is
available for readout in the next cycle. This is accomplished by using a unique serial register design that includes
special charge multiplication pixels.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated