OPA2277-DIE Datasheet, PDF (2/4 Pages) Texas Instruments – HIGH-PRECISION OPERATIONAL AMPLIFIER

OPA2277-DIE
SBOS611 – MARCH 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
15 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
Aluminium Pad (TiW/AlCu (0.5%))
BOND PAD
THICKNESS
1100 nm
Table 1. Bond Pad Coordinates in Microns⁽¹⁾
DISCRIPTION
Out A
Neg Input A
Pos Input A
V-
Pos Input B
Neg Input B
V+
Out B
PAD NUMBER
1
2
3
4
5
6
7
8
X MIN
-1414.78
-224.79
567.69
1391.92
567.69
-224.79
-1414.78
-1493.52
Y MIN
-787.4
-876.3
-876.3
-50.8
774.7
774.7
685.8
-52.07
(1) Substrate is not connected to any pin.
X MAX
-1313.18
-123.19
669.29
1493.52
669.29
-123.19
-1313.18
-1391.92
Y MAX
-685.8
-774.7
-774.7
50.8
876.3
876.3
787.4
52.07
2
Copyright © 2012, Texas Instruments Incorporated
Product Folder Link(s): OPA2277-DIE