OPA140A-DIE Datasheet, PDF (2/4 Pages) Texas Instruments – HIGH-PRECISION, LOW-NOISE, RAIL-TO-RAIL OUTPUT

OPA140A-DIE
SBOS610B – MARCH 2012 – REVISED MARCH 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
15 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
TiW/AlCu (0.5%)
BOND PAD
THICKNESS
1100 nm
DISCRIPTION
VIN
N/C
VIP
N/C
V-
OUT
V+
Table 1. Bond Pad Coordinates in Microns
PAD NUMBER
1
2
3
4
5
6
7
X MIN
469.600
49.500
1034.050
1264.500
1264.500
Y MIN
-720.500
-430.500
-124.550
-107.500
-737.500
X MAX
544.600
124.500
1109.050
1339.500
1339.500
Y MAX
-645.500
-355.500
-49.550
-32.500
-662.500
2
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Product Folder Link(s): OPA140A-DIE