LMH6738 Datasheet, PDF (2/20 Pages) National Semiconductor (TI) – Very Wideband, Low Distortion Triple Op Amp

LMH6738
SNOSAC1E – APRIL 2004 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings ⁽¹⁾
Supply Voltage (V⁺ - V^–)
I_OUT
Common Mode Input Voltage
Maximum Junction Temperature
Storage Temperature Range
Soldering Information
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
ESD Tolerance ⁽³⁾
Human Body Model
Machine Model
Storage Temperature Range
13.2V
See Note ⁽²⁾
±V_CC
+150°C
−65°C to +150°C
235°C
260°C
2000V
200V
−65°C to +150°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specifications, see the Electrical
Characteristics tables.
(2) The maximum output current (I_OUT) is determined by device power dissipation limitations. See the Power Dissipation section of the
Application Section for more details.
(3) Human Body Model is 1.5 kΩ in series with 100 pF. Machine Model is 0Ω in series with 200 pF.
Operating Ratings ⁽¹⁾
Thermal Resistance
Package
16-Pin SSOP
Operating Temperature Range
Supply Voltage (V⁺ - V^–)
(θ_JC)
36°C/W
(θ_JA)
120°C/W
−40°C to +85°C
8V to 12V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specifications, see the Electrical
Characteristics tables.
2
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