DS36C200_13 Datasheet, PDF (2/16 Pages) Texas Instruments – DS36C200 Dual High Speed Bi-Directional Differential Transceiver

DS36C200
SNLS111D – JUNE 1998 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings⁽¹⁾⁽²⁾
Supply Voltage (V_CC)
Enable Input Voltage
(DE, RE*)
Voltage (DI/RO)
Voltage (DO/RI±)
Maximum Package Power Dissipation @+25°C
M Package
Derate M Package
Storage Temperature Range
Lead Temperature Range
(Soldering, 4 sec.)
ESD Rating ⁽³⁾
(HBM, 1.5 kΩ, 100 pF)
(EIAJ, 0 Ω, 200 pF)
−0.3V to +6V
−0.3V to (V_CC + 0.3V)
−0.3V to +5.9V
−0.3V to +5.9V
1255 mW
10.04 mW/°C above +25°C
−65°C to +150°C
+260°C
≥ 3.5 kV
≥ 300V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply
that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) ESD Rating: HBM (1.5 kΩ, 100 pF) ≥ 3.5 kV EIAJ (0Ω, 200 pF) ≥ 300V
Recommended Operating Conditions
Supply Voltage (V_CC)
Receiver Input Voltage
Operating Free Air
Temperature (T_A)
Min
Typ
Max
Units
+4.5
+5.0
+5.5
V
0
2.4
V
0
25
70
°C
2
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