TPS650860 Datasheet, PDF (14/94 Pages) Texas Instruments – Configurable Multirail PMU for Multicore Processors

TPS650860
SWCS128A – MARCH 2015 – REVISED DECEMBER 2015
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Electrical Characteristics: LDOs (continued)
over recommended input voltage range, T_A = –40°C to 85°C and T_A = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
LDOA2 and LDOA3 (continued)
PSRR
C_OUT
Power supply rejection ratio
External output capacitance
ESR
f = 1 kHz, V_IN = 1.8 V, V_OUT = 1.2 V,
I_OUT = 300 mA,
C_OUT = 2.2 µF – 4.7 µF
f = 10 kHz, V_IN = 1.8 V, V_OUT = 1.2 V,
I_OUT = 300 mA,
C_OUT = 2.2 µF – 4.7 µF
48
dB
30
dB
2.2
4.7
10 µF
100 mΩ
R_DIS
Output auto-discharge
resistance
LDOA2_DIS[1:0] = 01
LDOA2_DIS[1:0] = 10
LDOA2_DIS[1:0] = 11
80
180
Ω
475
VTT LDO
V_IN
V_OUT
Power input voltage
DC output voltage
DC output voltage accuracy
I_OUT
DC output current
ΔV_OUT/ΔI_OUT Load regulation
I_OCP
Overcurrent protection
V_IN = 1.2 V, Measured at VTTFB pin
Relative to V_IN / 2, I_OUT ≤ 10 mA,
1.1 V ≤ V_IN ≤ 1.35 V
Relative to V_IN / 2, I_OUT ≤ 500 mA,
1.1 V ≤ V_IN ≤ 1.35 V
sink(–) and source(+)
1.1 V ≤ V_IN ≤ 1.35 V,
I_OUT = –500 mA to 500 mA
Measured with output shorted to
ground
–10
–25
–500
–4%
0.95
1.2
V_IN / 2
3.3 V
V
10
mV
25
500 mA
4%
A
V_{TH_PG}
V_{TH_HYS_PG}
I_Q
I_LKG
C_IN
C_OUT
R_DIS
Power Good deassertion
threshold in percentage of
target V_OUT
Power Good reassertion
hysteresis entering back into
V_{TH_PG}
Total ground current
OFF leakage current
External input capacitance
External output capacitance
Output auto-discharge
resistance
V_OUT rising
V_OUT falling
V_IN = 1.2 V, I_OUT = 0 A
V_IN = 1.2 V, disabled
VTT_DIS = 0
VTT_DIS = 1
10
35
1000
60
110%
95%
5%
80
240 µA
1 µA
µF
µF
kΩ
100 Ω
14
Specifications
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