TM4C1232E6PM Datasheet, PDF (1146/1171 Pages) Texas Instruments – Tiva Microcontroller

Electrical Characteristics
21.11 Flash Memory and EEPROM
Table 21-24. Flash Memory Characteristics
Parameter
PE_CYC
T_RET
T_PROG64
Parameter Name
Number of program/erase cycles before failure^a
Data retention, -40˚C to +85˚C
Program time for double-word-aligned 64 bits of
data^b
Min
100,000
20
30
Nom
-
-
50
Max
-
-
300
Unit
cycles
years
µs
Page erase time, <1k cycles
-
8
15
ms
T_ERASE
Page erase time, 10k cycles
Page erase time, 100k cycles
-
15
40
ms
-
75
500
ms
Mass erase time, <1k cycles
-
10
25
ms
T_ME
Mass erase time, 10k cycles
Mass erase time, 100k cycles
-
20
70
ms
-
300
2500
ms
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
b. If programming fewer than 64 bits of data, the programming time is the same. For example, if only 32 bits of data need
to be programmed, the other 32 bits are masked off.
Table 21-25. EEPROM Characteristics^a
Parameter Parameter Name
Min Nom
Max
EPE_CYCb
Number of mass program/erase cycles of a single word before 500,000
failure^c
-
-
Unit
cycles
ET_RET Data retention, -40˚C to +85˚C
Program time for 32 bits of data - space available
20
-
-
-
110
600
years
μs
Program time for 32 bits of data - requires a copy to the copy -
30
-
ms
buffer, copy buffer has space and less than 10% of EEPROM
endurance used
Program time for 32 bits of data - requires a copy to the copy -
-
900
ms
buffer, copy buffer has space and greater than 90% of
ET_PROG EEPROM endurance used
Program time for 32 bits of data - requires a copy to the copy -
60
-
ms
buffer, copy buffer requires an erase and less than 10% of
EEPROM endurance used
Program time for 32 bits of data - requires a copy to the copy -
-
1800
ms
buffer, copy buffer requires an erase and greater than 90% of
EEPROM endurance used
ET_READ Read access time
Mass erase time, <1k cycles
-
4
-
system clocks
-
8
15
ms
ET_ME
Mass erase time, 10k cycles
Mass erase time, 100k cycles
-
15
40
ms
-
75
500
ms
a. Because the EEPROM operates as a background task and does not prevent the CPU from executing from Flash memory,
the operation will complete within the maximum time specified provided the EEPROM operation is not stalled by a Flash
memory program or erase operation.
b. One word can be written more than 500K times, but these writes impact the endurance of the words in the meta-block
that the word is within. Different words can be written such that any or all words can be written more than 500K times
when write counts per word stay about the same. See the section called “Endurance” on page 471 for more information.
c. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
1146
Texas Instruments-Production Data
June 12, 2014