ONET8541T_16 Datasheet, PDF (11/17 Pages) Texas Instruments – 11.3 Gbps Limiting Transimpedance Amplifier

ONET8541T
www.ti.com
SLLSE85A – JULY 2011 – REVISED AUGUST 2011
and OUT–.
3. Use short bond wire connections for the supply terminals VCC_IN, VCC_OUT, and GND. Supply voltage
filtering is provided on chip but filtering may be improved by using an additional external capacitor.
CHIP DIMENSIONS AND PAD LOCATIONS
18
17
8541T
M
1
16
2
15
3
14
4
13
5
12
6 7 8 9 10 11
870μm
x
Die Thickness: 203 ± 13 μm
Pad Dimensions: 105 µm × 65 μm
Die Size: 870 ± 40 μm × 1036 ± 40 μm
PAD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
COORDINATES
(referenced to pad 1)
x (μm)
y (μm)
0
0
0
-115
0
-230
0
-460
0
-575
115.5
-728
225.5
-728
335.5
-728
445.5
-728
555.5
-728
665.5
-728
671
-575
671
-460
671
-230
671
-115
671
0
393
109
SYMBOL
GND
OUT+
GND
VCC_OUT
VCC_IN
GND
FILTER1
IN
FILTER2
GND
NC
RSSI_IB
RSSI_EB
GND
OUT–
GND
GND
TYPE
Supply
Analog output
Supply
Supply
Supply
Supply
Analog
Analog input
Analog
Supply
No connect
Analog output
Analog output
Supply
Analog output
Supply
Supply
DESCRIPTION
Circuit ground
Non-inverted data output
Circuit ground
3.3V supply voltage
3.3V supply voltage
Circuit ground
Bias voltage for photodiode
Data input to TIA
Bias voltage for photodiode
Circuit ground
Do not connect
RSSI output signal for internally biased receivers
RSSI output signal for externally biased receivers
Circuit ground
Inverted data output
Circuit ground
Circuit ground
Copyright © 2011, Texas Instruments Incorporated
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