ONET8521T Datasheet, PDF (11/16 Pages) Texas Instruments – 11.3 Gbps Limiting Transimpedance Amplifier With RSSI

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VCC_OUT
VCC_IN
V_BIAS
ONET8521T
SLLSE87A – JULY 2011 – REVISED AUGUST 2011
0.1μF ^OUT+
0.1μF _OUT-
GND
RRSSI
Figure 16. Basic Application Circuit for APD Receivers
RSSI
ASSEMBLY RECOMMENDATIONS
Careful attention to assembly parasitics and external components is necessary to achieve optimal performance.
Recommendations that optimize performance include:
1. Minimize the total capacitance on the IN pad by using a low capacitance photodiode and paying attention to
stray capacitances. Place the photodiode close to the ONET8521T die in order to minimize the bond wire
length and thus the parasitic inductance.
2. Use identical termination and symmetrical transmission lines at the ac coupled differential output pins OUT+
and OUT–.
3. Use short bond wire connections for the supply terminals VCC_IN, VCC_OUT, and GND. Supply voltage
filtering is provided on chip but filtering may be improved by using an additional external capacitor.
Copyright © 2011, Texas Instruments Incorporated
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