TPS28225-Q1_15 Datasheet, PDF (1/38 Pages) Texas Instruments – TPS28225-Q1 High-Frequency 4-A Sink Synchronous MOSFET Drivers

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TPS28225-Q1
SLUSAR9B – DECEMBER 2011 – REVISED APRIL 2015
TPS28225-Q1 High-Frequency 4-A Sink Synchronous MOSFET Drivers
1 FEATURES
•1 Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 2: –40°C to 105°C
Ambient Operating Temperature Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C3B
• Drives Two N-Channel MOSFETs with 14-ns
Adaptive Dead Time
• Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With
Best Efficiency at 7 V to 8 V
• Wide Power System Train Input Voltage: 3 V Up
to 27 V
• Wide Input PWM Signals: 2.0 V up to 13.2-V
Amplitude
• Capable Drive MOSFETs with ≥40-A Current per
Phase
• High Frequency Operation: 14-ns Propagation
Delay and 10-ns Rise/Fall Time Allow F_SW - 2
MHz
• Capable Propagate <30-ns Input PWM Pulses
• Low-Side Driver Sink On-Resistance (0.4 Ω)
Prevents dV/dT Related Shoot-Through Current
• 3-State PWM Input for Power Stage Shutdown
• Space Saving Enable (input) and Power Good
(output) Signals on Same Pin
• Thermal Shutdown
• UVLO Protection
• Internal Bootstrap Diode
• Economical SOIC-8 and Thermally Enhanced 3-
mm x 3-mm DFN-8 Packages
• High Performance Replacement for Popular 3-
State Input Drivers
2 APPLICATIONS
• Multi-Phase DC-to-DC Converters with Analog or
Digital Control
• Desktop and Server VRMs and EVRDs
• Portable/Notebook Regulators
• Synchronous Rectification for Isolated Power
Supplies
• Wireless Charging Transmitter
3 Description
The TPS28225-Q1 is a high-speed driver for N-
channel complimentary driven power MOSFETs with
adaptive dead-time control. This driver is optimized
for use in variety of high-current one and multi-phase
dc-to-dc converters. The TPS28225-Q1 is a solution
that provides highly efficient, small size low EMI
emissions.
The performance is achieved by up to 8.8-V gate
drive voltage, 14-ns adaptive dead-time control, 14-ns
propagation delays and high-current 2-A source and
4-A sink drive capability. The 0.4-Ω impedance for
the lower gate driver holds the gate of power
MOSFET below its threshold and ensures no shoot-
through current at high dV/dt phase node transitions.
The bootstrap capacitor charged by an internal diode
allows use of N-channel MOSFETs in half-bridge
configuration.
The TPS28225-Q1 is offered in an economical SOIC-
8 package. The driver is specified in the extended
temperature range of –40°C to 105°C with the
absolute maximum junction temperature 150°C.
Device Information⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPS28225-Q1
SOIC
5.00 mm x 6.2 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
V_DD (4.5 V to 8 V)
TPS40200
VCC 3
OUT ³
FB ³
GND
3
6 _{VDD BOOT} 2
TPS28225
UGATE 1
3 PWM PHASE 8
7 _ENBL
LGATE 5
GND 4
V_IN (3 V to 32 V − V_DD)
V_OUT
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.