TM248NBK36E Datasheet, PDF (1/12 Pages) Texas Instruments – 36-BIT DYNAMIC RAM MODULE

TM124MBK36E, TM124MBK36T 1048576 BY 36-BIT DYNAMIC RAM MODULE
TM248NBK36E, TM248NBK36T 2097152 BY 36-BIT DYNAMIC RAM MODULE
• Organization
TM124MBK36E . . . 1 048 576 × 36
TM248NBK36E . . . 2 097 152 × 36
• Single 5-V Power Supply (±10% Tolerance)
• 72-Pin Leadless Single-In-Line Memory
Module (SIMM)
• TM124MBK36E – Utilizes Eight 4-Megabit
Dynamic RAMs in Plastic Small-Outline
J-Lead (SOJ) Packages and Two 2-Megabit
Dual-CAS Dynamic RAMs in Plastic
Small-Outline J-Lead (SOJ) Packages
• TM248NBK36E – Utilizes Sixteen 4-Megabit
Dynamic RAMs in Plastic Small-Outline
J-Lead (SOJ) Packages and Four 2-Megabit
Dual-CAS Dynamic RAMs in Plastic
Small-Outline J-Lead (SOJ) Packages
• Long Refresh Period . . . 16 ms
(1024 Cycles)
• All Inputs, Outputs, Clocks Fully TTL
Compatible
• 3-State Output
• Common CAS Control for Nine Common
Data-In and Data-Out Lines in Four Blocks
SMMS139 – MARCH 1994
• Enhanced Page-Mode Operation With
CAS-Before-RAS, RAS-Only, and Hidden
Refresh
• Presence Detect
• Performance Ranges:
ACCESS
TIME
tRAC
(MAX)
ACCESS ACCESS READ
TIME TIME OR
tAA
tCAC WRITE
CYCLE
(MAX) (MAX) (MIN)
’124MBK36E-60 60 ns
30 ns 15 ns 110 ns
’124MBK36E-70 70 ns
35 ns 18 ns 130 ns
’124MBK36E-80 80 ns
40 ns 20 ns 150 ns
’248NBK36E-60 60 ns
30 ns 15 ns 110 ns
’248NBK36E-70 70 ns
35 ns 18 ns 130 ns
’248NBK36E-80 80 ns
40 ns 20 ns 150 ns
• Low Power Dissipation
• Operating Free-Air Temperature Range:
0°C to 70°C
• Gold-Tabbed Versions Available:^†
– TM124MBK36E
– TM248NBK36E
• Tin-Lead (Solder) Tabbed Versions
Available:
– TM124MBK36T
– TM248NBK36T
description
The TM124MBK36E is a dynamic random-access memory (RAM) organized as four times 1 048 576 × 9
(bit 9 is generally used for parity) in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is
composed of eight TMS44400DJ, 1 048 576 × 4-bit dynamic RAMs, each in a 20/26-lead plastic small-outline
J-lead (SOJ) package, and two TMS42260DJ, 1 048 576 × 2-bit dual-CAS dynamic RAMs, each in a 24/26-lead
plastic small-outline J-lead (SOJ) package, mounted on a substrate with decoupling capacitors. Each
TMS44400DJ or TMS42260DJ is described in the TMS44400 or TMS42260 data sheet, respectively.
The TM124MBK36E is available in the single-sided BK leadless module for use with sockets. It features RAS
access times of 60 ns, 70 ns, and 80 ns. This device is characterized for operation from 0°C to 70°C.
The TM248NBK36E is a dynamic random-access memory (RAM) organized as four times 2 097 152 × 9 (bit 9
is generally used for parity) in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed
of sixteen TMS44400DJ, 1 048 576 × 4-bit dynamic RAMs, each in a 20/26-lead plastic small-outline J-lead
(SOJ) package, and four TMS42260DJ, 1 048 576 × 2-bit dual-CAS dynamic RAMs, each in a 24/26-lead plastic
small-outline J-lead (SOJ) package, mounted on a substrate with decoupling capacitors. Each TMS44400DJ
or TMS42260DJ is described in the TMS44400 or TMS42260 data sheet, respectively.
The TM248NBK36E is available in the double-sided BK leadless module for use with sockets. It features RAS
access times of 60 ns, 70 ns, and 80 ns. This device is rated for operation from 0°C to 70°C.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1994, Texas Instruments Incorporated
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