SN74CB3T1G125-Q1 Datasheet, PDF (1/13 Pages) Texas Instruments – SINGLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE SWITCH WITH 5-V-TOLERANT LEVEL SHIFTER

SN74CB3T1G125-Q1
www.ti.com
SCDS319 – JUNE 2011
SINGLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE SWITCH
WITH 5-V-TOLERANT LEVEL SHIFTER
Check for Samples: SN74CB3T1G125-Q1
FEATURES
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• Qualified for Automotive Applications
• Output Voltage Translation Tracks V_CC
• Supports Mixed-Mode Signal Operation on All
Data I/O Ports
– 5-V Input Down to 3.3-V Output Level Shift
With 3.3-V V_CC
– 5-V/3.3-V Input Down to 2.5-V Output Level
Shift With 2.5-V V_CC
• 5-V-Tolerant I/Os, With Device Powered Up or
Powered Down
• Bidirectional Data Flow With Near-Zero
Propagation Delay
• Low ON-State Resistance (r_on) Characteristics
(r_on = 5 Ω Typ)
• Low Input/Output Capacitance Minimizes
Loading (C_io(OFF) = 5 pF Typ)
• Data and Control Inputs Provide Undershoot
Clamp Diodes
• Low Power Consumption
(I_CC = 20 μA Max)
• V_CC Operating Range From 2.3 V to 3.6 V
• Data I/Os Support 0- to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
• Control Inputs Can Be Driven by TTL or
5-V/3.3-V CMOS Outputs
• I_off Supports Partial-Power-Down Mode
Operation
• Supports Digital Applications: Level
Translation, USB Interface, Bus Isolation
• Ideal for Low-Power Portable Equipment
DESCRIPTION
The SN74CB3T1G125-Q1 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r_on),
allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O
ports by providing voltage translation that tracks V_CC. The SN74CB3T1G125-Q1 supports systems using 5-V
TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).
The SN74CB3T1G125-Q1 is a 1-bit bus switch with a single ouput-enable (OE) input. When OE is low, the bus
switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE
is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging
current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated