LP5952_15 Datasheet, PDF (1/29 Pages) Texas Instruments – 350mA Dual Rail Linear Regulator

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Design
LM5050-1, LM5050-1-Q1
SNVS629E – MAY 2011 – REVISED DECEMBER 2015
LM5050-1/-Q1 High-Side OR-ing FET Controller
1 Features
•1 Available in Standard and AEC-Q100 Qualified
Versions LM5050Q0MK-1 (up to 150°C T_J) and
LM5050Q1MK-1 (up to 125°C T_J)
• Wide Operating Input Voltage Range, V_IN: 1 V to
75 V (V_BIAS required for V_IN < 5 V)
• 100-V Transient Capability
• Charge Pump Gate Driver for External N-Channel
MOSFET
• Fast 50-ns Response to Current Reversal
• 2-A Peak Gate Turnoff Current
• Minimum V_DS Clamp for Faster Turnoff
• Package: SOT-6 (Thin SOT-23-6)
2 Applications
Active OR-ing of Redundant (N+1) Power
Supplies
3 Description
The LM5050-1/-Q1 High Side OR-ing FET Controller
operates in conjunction with an external MOSFET as
an ideal diode rectifier when connected in series with
a power source. This ORing controller allows
MOSFETs to replace diode rectifiers in power
distribution networks thus reducing both power loss
and voltage drops.
The LM5050-1/-Q1 controller provides charge pump
gate drive for an external N-Channel MOSFET and a
fast response comparator to turn off the FET when
current flows in the reverse direction. The LM5050-1/-
Q1 can connect power supplies ranging from 5 V to
75 V and can withstand transients up to 100 V.
Device Information⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM5050-1
LM5050-1-Q1
SOT (6)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Full Application
V_IN
+5.0V to +75V
Shutdown
GND
IN
Low= FET On, High= FET Off
OFF
GATE
OUT
VS
LM5050-1
GND
V_OUT
100:
0.1 PF
GND
Typical Redundant Supply Configuration
PS1
IN GATE OUT
LM5050-1 VS
GND
C_LOAD R_LOAD
PS2
IN GATE OUT
LM5050-1 VS
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.