LMC6442 Datasheet, PDF (1/24 Pages) National Semiconductor (TI) – Dual Micropower Rail-to-Rail Output Single Supply Operational Amplifier

LMC6442
www.ti.com
SNOS013E – SEPTEMBER 1997 – REVISED MARCH 2013
LMC6442 Dual Micropower Rail-to-Rail Output Single Supply Operational Amplifier
Check for Samples: LMC6442
FEATURES
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•2 (Typical, V_S = 2.2V)
• Output Swing to Within 30 mV of Supply Rail
• High Voltage Gain 103 dB
• Gain Bandwidth Product 9.5 KHz
• Ensured for: 2.2V, 5V, 10V
• Low Supply Current 0.95 µA/Amplifier
• Input Voltage Range −0.3V to V⁺ -0.9V
• 2.1 µW/Amplifier Power Consumption
• Stable for A_V ≥ +2 or A_V ≤ −1
APPLICATIONS
• Portable Instruments
• Smoke/Gas/CO/Fire Detectors
• Pagers/Cell Phones
• Instrumentation
• Thermostats
• Occupancy Sensors
• Cameras
• Active Badges
DESCRIPTION
The LMC6442 is ideal for battery powered systems,
where very low supply current (less than one
microamp per amplifier) and Rail-to-Rail output swing
is required. It is characterized for 2.2V to 10V
operation, and at 2.2V supply, the LMC6442 is ideal
for single (Li-Ion) or two cell (NiCad or alkaline)
battery systems.
The LMC6442 is designed for battery powered
systems that require long service life through low
supply current, such as smoke and gas detectors,
and pager or personal communications systems.
Operation from single supply is enhanced by the wide
common mode input voltage range which includes the
ground (or negative supply) for ground sensing
applications. Very low (5 fA, typical) input bias current
and near constant supply current over supply voltage
enhance the LMC6442's performance near the end-
of-life battery voltage.
Designed for closed loop gains of greater than plus
two (or minus one), the amplifier has typically 9.5
KHz GBWP (Gain Bandwidth Product). Unity gain can
be used with a simple compensation circuit, which
also allows capacitive loads of up to 300 pF to be
driven, as described in the Application Information
section.
Connection Diagram
Top View
Figure 1. 8-Pin SOIC / PDIP Package
See Package Numbers D0008A, P0008E
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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