TMS28F210 Datasheet, PDF (9/25 Pages) Texas Instruments – 65536 BY 16-BIT FLASH MEMORY

TMS28F210
65536 BY 16-BIT
FLASH MEMORY
SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997
algorithm-selection-mode command
The algorithm-selection mode is activated by writing 0090h into the command register. The manufacturer
equivalent code (0097h) is identified by the value read from address location 0000h, and the device equivalent
code (00E5h) is identified by the value read from address location 0001h.
set-up-program/program commands
The programming algorithm initiates with E = V_IL, W = V_IL, G = V_IH, V_PP = V_PPH, and V_CC = 5 V. To enter the
programming mode, write the set-up-program command, 0040h, into the command register. The programming
operation is invoked by the next write-enable pulse. Addresses are latched internally on the falling edge of W,
and data is latched internally on the rising edge of W. The programming operation begins on the rising edge
of W and ends on the rising edge of the next W pulse. The program operation requires 10 µs for completion
before the program-verify command, 00C0h, can be loaded.
Maximum program timing is controlled by the internal stop timer. When the stop timer terminates the program
operation, the device enters an inactive state and remains inactive until a command is received.
program-verify command
The TMS28F210 can be programmed sequentially or randomly because it is programmed one word at a time.
Each word must be verified after it is programmed. The program-verify operation prepares the device to verify
the most recently programmed word. To invoke the program-verify operation, 00C0h must be written into the
command register. The program-verify operation ends on the rising edge of W.
While verifying a word, the TMS28F210 applies an internal margin voltage to the designated word. If the true
data and programmed data match, programming continues to the next designated word location; otherwise, the
word must be reprogrammed. Figure 1 shows how commands and bus operations are combined for word
programming.
set-up-erase/erase commands
The erase algorithm initiates with E = V_IL, W = V_IL, G = V_IH, V_PP = V_PPH, and V_CC = 5 V. To enter the erase mode,
write the set-up-erase command, 0020h, into the command register. After the TMS28F210 is in the erase mode,
writing a second erase command, 0020h, into the command register invokes the erase operation. The erase
operation begins on the rising edge of W and ends on the rising edge of the next W. The erase operation requires
10 ms to complete before the erase-verify command, 00A0h, can be loaded.
Maximum erase timing is controlled by the internal stop timer. When the stop timer terminates the erase
operation, the device enters an inactive state and remains inactive until a command is received.
erase-verify command
All words must be verified following an erase operation. After the erase operation is complete, an erased word
can be verified by writing the erase-verify command, 00A0h, into the command register. This command causes
the device to exit the erase mode on the rising edge of W. The address of the word to be verified is latched on
the falling edge of W. The erase-verify operation remains enabled until a command is written to the command
register.
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