ISO5852S_15 Datasheet, PDF (9/37 Pages) Texas Instruments – High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

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Typical Characteristics (continued)
ISO5852S
SLLSEQ0A – AUGUST 2015 – REVISED SEPTEMBER 2015
OUT
DESAT
/FLT
RDY
OUT
DESAT
/FLT
RDY
1 ms / Div
C_L = 10 nF
R_GH = 0 Ω
V_CC2 - V_EE2 = V_CC2 - GND2 = 15 V
R_GL = 0 Ω
DESAT = 220 pF
Figure 12. Output Transient Waveform DESAT, RDY and FLT
2 ms / Div
C_L = 10 nF
R_GH = 0 Ω
V_CC2 - V_EE2 = V_CC2 - GND2 = 15 V
R_GL = 0 Ω
DESAT = 220pF
Figure 13. Output Transient Waveform DESAT, RDY and FLT
OUT
DESAT
/FLT
RDY
OUT
DESAT
/FLT
RDY
1 ms / Div
C_L = 10 nF
R_GH = 0 Ω
V_CC2 - V_EE2 = V_CC2 - GND2 = 30 V
R_GL = 0 Ω
DESAT = 220 pF
Figure 14. Output Transient Waveform DESAT, RDY and FLT
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-40 -25 -10
IN+ = High
V_CC1 = 3 V
V_CC1 = 3.3 V
V_CC1 = 5 V
V_CC1 = 5.5 V
5 20 35 50 65 80
Ambient Temperature (GC)
IN- = Low
95 110 125
D006
Figure 16. I_CC1 Supply Current vs Temperature
2 ms / Div
C_L = 10 nF
R_GH = 0 Ω
V_CC2 - V_EE2 = V_CC2 - GND2 = 30 V
R_GL = 0 Ω
DESAT = 220pF
Figure 15. Output Transient Waveform DESAT, RDY and FLT
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
-40 -25 -10
IN+ = Low
V_CC1 = 3 V
V_CC1 = 3.3 V
V_CC1 = 5 V
V_CC1 = 5.5 V
5 20 35 50 65 80
Ambient Temperature (GC)
IN- = Low
95 110 125
D007
Figure 17. I_CC1 Supply Current vs Temperature
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