ISO5852S_15 Datasheet, PDF (1/37 Pages) Texas Instruments – High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

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ISO5852S
SLLSEQ0A – AUGUST 2015 – REVISED SEPTEMBER 2015
ISO5852S High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
with Split Outputs and Active Safety Features
1 Features
•1 100-kV/μs Minimum Common-Mode Transient
Immunity (CMTI) at V_CM = 1500 V
• Split Outputs to Provide 2.5-A Peak Source and
5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Soft Turn-Off (STO) during Short Circuit
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Under Voltage Lock-Out (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pull-down and Default Low Outputs
with Low Supply or Floating Inputs
• 2.25-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Operating Temperature: –40°C to 125°C Ambient
• Surge Immunity 12800-V_PK (according to IEC
61000-4-5)
• Safety and Regulatory Certifications:
– 8000-V_PK V_IOTM and 2121-V_PK V_IORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-V_RMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950-1, IEC 60601-1 and IEC 61010-1 End
Equipment Standards
– CQC Certification per GB4943.1-2011
– All Certifications are Planned
3 Description
The ISO5852S is a 5.7-kV_RMS, reinforced isolated
gate driver for IGBTs and MOSFETs with split
outputs, OUTH and OUTL, providing 2.5-A source
and 5-A sink current. The input side operates from a
single 2.25-V to 5.5-V supply. The output side allows
for a supply range from minimum 15-V to maximum
30-V. Two complementary CMOS inputs control the
output state of the gate driver. The short propagation
time of 76 ns assures accurate control of the output
stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overcurrent
condition. Upon a DESAT detect, a Mute logic
immediately blocks the output of the isolator and
initiates a soft-turn-off procedure which disables,
OUTH, and pulls OUTL to low over a time span of
2 μs. When OUTL reaches 2 V with respect to the
most negative supply potential, V_EE2, the gate driver
output is pulled hard to V_EE2 potential turning the
IGBT immediately off.
When desaturation is active, a fault signal is sent
across the isolation barrier pulling the FLT output at
the input side low and blocking the isolator input.
Mute logic is activated through the soft-turn-off
period. The FLT output condition is latched and can
be reset only after RDY goes high, through a low-
active pulse at the RST input.
Device Information⁽¹⁾
PART NUMBER PACKAGE
BODY SIZE (NOM)
ISO5852S
SOIC (16)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Functional Block Diagram
2 Applications
• Isolated IGBT and MOSFET Drives in
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– HEV and EV Power Modules
– Induction Heating
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.