OPA314_15 Datasheet, PDF (7/45 Pages) Texas Instruments – OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

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OPA314, OPA2314, OPA4314
SBOS563G – MAY 2011 – REVISED JUNE 2015
6.5 Thermal Information: OPA2314
THERMAL METRIC⁽¹⁾
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
Junction-to-ambient thermal resistance
Junction-to-case(top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
D (SO)
8 PINS
138.4
89.5
78.6
29.9
78.1
OPA2314
DGK (MSOP)
8 PINS
191.2
61.9
111.9
5.1
110.2
DRB (DFN)
8 PINS
53.8
69.2
20.1
3.8
11.6
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.6 Thermal Information: OPA4314
THERMAL METRIC⁽¹⁾
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
Junction-to-ambient thermal resistance
Junction-to-case(top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
OPA4314
D (SOIC)
PW (TSSOP)
14 PINS
14 PINS
93.2
121
51.8
49.4
49.4
62.8
13.5
5.9
42.2
62.2
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.7 Electrical Characteristics
V_S = 1.8 V to 5.5 V; At T_A = 25 °C, R_L = 10 kΩ connected to V_S/2, V_CM = V_S/2, and V_OUT = V_S/2, unless otherwise noted.⁽¹⁾
PARAMETER
TEST CONDITIONS
T_A = 25 °C
MIN
TYP
MAX
T_A = –40°C to 125°C
MIN
TYP MAX
UNIT
OFFSET VOLTAGE
V_OS
dV_OS/dT
PSRR
Input offset voltage
vs Temperature
vs power supply
Over temperature
V_CM = (V_S+) – 1.3 V
V_CM = (V_S+) – 1.3 V
0.5
2.5
1
78
92
74
mV
μV/°C
dB
dB
Channel separation, DC At DC
10
µV/V
INPUT VOLTAGE RANGE
V_CM
Common-mode voltage
range
(V–) –
0.2
(V+) +
0.2
V
CMRR
Common-mode rejection
ratio
V_S = 1.8 V to 5.5 V, (V_S–) – 0.2 V < V_CM <
(V_S+) – 1.3 V
V_S = 5.5 V, V_CM = –0.2 V to 5.7 V⁽²⁾
75
96
66
80
V_S = 1.8 V, (V_S–) – 0.2 V < V_CM < (V_S+) – 1.3 V
Over temperature
V_S = 5.5 V, (V_S–) – 0.2 V < V_CM < (V_S+) – 1.3 V
V_S = 5.5 V, V_CM = –0.2 V to 5.7 V⁽²⁾
INPUT BIAS CURRENT
dB
dB
70
86
dB
73
90
dB
60
dB
I_B
Input bias current
Over temperature
±0.2
±10
pA
±600 pA
I_OS
Input offset current
Over temperature
±0.2
±10
pA
±600 pA
NOISE
Input voltage noise
(peak-to-peak)
f = 0.1 Hz to 10 Hz
5
μV_PP
(1) Parameters with minimum or maximum specification limits are 100% production tested at +25ºC, unless otherwise noted. Over
temperature limits are based on characterization and statistical analysis.
(2) Specified by design and characterization; not production tested.
Copyright © 2011–2015, Texas Instruments Incorporated
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