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LMX9830 Datasheet, PDF (6/48 Pages) National Semiconductor (TI) – BluetoothTM Serial Port Module
8.0 General Specifications
Absolute Maximum Ratings (see Table 2) indicate limits be-
yond which damage to the device may occur. Operating
Ratings (see Table 3) indicate conditions for which the device
is intended to be functional.
This device is a high performance RF integrated circuit and is
ESD sensitive. Handling and assembly of this device should
be performed at ESD free workstations.
The following conditions are true unless otherwise stated in
the tables below:
• TA = -40°C to +85°C
• VCC = 3.3V
• RF system performance specifications are guaranteed on
National Semiconductor Mesa board rev 1.1 reference
design platform.
TABLE 2. Absolute Maximum Ratings
Symbol
VCC
VI
VDD_RF
VDD_IF
VDD_X1
VDD_VCO
PINRF
VANT
TS
TL
TLNOPB
ESDHBM
ESDMM
Parameter
Digital Voltage Regulator input
Voltage on any pad with GND = 0V
Supply Voltage Radio
RF Input Power
Applied Voltage to ANT pad
Storage Temperature Range
Lead Temperature (Note 5) (solder 4 sec.)
Lead Temperature NOPB (Note 5), (Note 6)
(solder 40 sec.)
ESD - Human Body Model
ESD - Machine Model
Min
Max
Unit
-0.2
4
V
-0.2
VCC + 0.2
V
0.2
3.3
V
0
dBm
1.95
V
-65
+150
°C
225
°C
260
°C
2000
V
200 (Note 7)
V
Note 5: Reference IPC/JDEC J-STD-20C spec.
Note 6: NOPB = No Pb (No Lead).
Note 7: A 200V ESD rating applies to all pins except OP3, OP6, OP7, MDODI, SCLK, SFS, STD, TDO, and ANT pins = 150V.
Symbol
VCC
TR
TA
VCC_IO
VCC_PLL
VDD_RF
VDD_IF
VDD_X1
VDD_VCO
VDD_IOR
VCC_IOP
VCC_CORE
VCC_COREMAX
VCC_CORESHORT
TABLE 3. Recommended Operating Conditions
Parameter
Min
Digital Voltage Regulator input
2.5
Digital Voltage Regulator Rise Time
Ambient Operating Temperature Range
-40
Fully Functional Bluetooth Node
Supply Voltage Digital I/O
1.6
Internally connected to VCC_Core
Supply Voltage Radio
2.5
Supply Voltage Radio I/O
1.6
Supply Voltage PCM Interface
1.6
Supply Voltage Output
Supply Voltage Output Max Load
When used as Supply Input (VCC grounded)
1.6
Typ
Max
Unit
2.75
3.6
V
10
μs
+25
+125
°C
3.3
3.6
V
2.75
3
V
2.75 VDD_RF
V
3.3
3.6
V
1.8
V
5
mA
1.8
2
V
5
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