BQ4015_07 Datasheet, PDF (6/15 Pages) Texas Instruments – 512Kx8 Nonvolatile SRAM

bq4015/Y
Read Cycle No. 1 (Address Access) ^{1, 2}
Read Cycle No. 2 (CE Access) ^{1, 2, 3}
Read Cycle No. 3 (OE Access) ^1,5
Notes:
1. WE is held high for a read cycle.
2. Device is continuously selected: CE = OE = VIL.
3. Address is valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Device is continuously selected: CE = VIL.
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