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BQ25101H_15 Datasheet, PDF (6/32 Pages) Texas Instruments – bq2510x 250-mA Single Cell Li-Ion Battery Chargers, 1-mA Termination, 75-nA Battery Leakage
bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L
SLUSBV8C – AUGUST 2014 – REVISED NOVEMBER 2014
www.ti.com
Electrical Characteristics (continued)
Over junction temperature range 0°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VDO(IN-OUT)
IOUT
Drop-Out, VIN – VOUT
Output “fast charge” formula
KISET
Fast charge current factor
PRECHARGE – SET BY PRETERM PIN
Adjust VIN down until IOUT = 0.2 A; VOUT = 4.15 V;
RISET = 680 Ω; TJ ≤ 100°C
VOUT(REG) > VOUT > VLOWV; VIN = 5 V
RISET = KISET /IOUT; 20 < IOUT < 250 mA
RISET = KISET /IOUT; 5 < IOUT < 20 mA
220
KISET/RISET
129
135
125
135
400 mV
A
145
AΩ
145
VLOWV
Pre-charge to fast-charge
transition threshold
2.4
2.5
2.6 V
tDGL1(LOWV)
Deglitch time on pre-charge to
fast-charge transition
57
μs
tDGL2(LOWV)
Deglitch time on fast-charge to
pre-charge transition
32
ms
IPRE-TERM
%PRECHG
Refer to the Termination Section
Pre-charge current, default
setting
Pre-charge current formula
KPRE-CHG
% Pre-charge Factor
TERMINATION – SET BY PRE-TERM PIN
VOUT < VLOWV; RISET = 2.7 kΩ; RPRE-TERM= High Z
or for BQ25101/101H
RPRE-TERM = KPRE-CHG (Ω/%) × %PRE-CHG (%)
VOUT < VLOWV; VIN = 5 V;
RPRE-TERM = 6 kΩ to 30 kΩ;
RISET = 1.8 kΩ;
RPRE-TERM = KPRE-CHG × %IPRE-CHG,
where %IPRE-CHG is 20 to 100%
VOUT < VLOWV; VIN = 5 V;
RPRE-TERM = 3 kΩ to 6 kΩ;
RISET = 1.8 kΩ;
RPRE-TERM = KPRE-CHG × %IPRE-CHG,
where %IPRE-CHG is 10% to 20%
18
20
RPRE-TERM/KPRE-CHG%
22 %IOUT-
CC
280
300
320 Ω/%
265
300
340 Ω/%
%TERM
Termination threshold current,
default setting
Termination current threshold
formula
VOUT > VRCH; RISET = 2.7 kΩ; RPRE-TERM = High Z
or for BQ25101/101H
RPRE-TERM = KTERM (Ω/%) × %TERM (%)
9
10
RPRE-TERM/ KTERM
11 %IOUT-
CC
KTERM
IPRE-TERM
% Term factor
Current for programming the
term. and pre-chg with resistor,
ITerm-Start is the initial PRE-TERM
current
VOUT > VRCH; VIN = 5 V;
RPRE-TERM = 6 kΩ to 30 kΩ;
RISET = 1.8 kΩ, RPRE-TERM=KTERM × %ITERM,
where %ITERM is 10 to 50%
VOUT > VRCH; VIN = 5 V;
RPRE-TERM = 3 kΩ to 6 kΩ ;
RISET = 1.8 kΩ, RPRE-TERM= KTERM × %ITERM,
where %ITERM is 5 to 10%
VOUT > VRCH; VIN = 5 V;
RPRE-TERM = 750 Ω to 3 kΩ;
RISET = 1.8 kΩ, RPRE-TERM= KTERM × %ITERM,
where %ITERM is 1.25% to 5%
RPRE-TERM = 6 kΩ; VOUT = 4.15 V
575
600
640
555
620
685 Ω/%
352
680
1001
23
25
27 μA
ITERM
Termination current range
Minimum absolute termination current
1
mA
%TERM
tDGL(TERM)
Termination current formula
Deglitch time, termination
detected
RTERM/ KTERM
%
29
ms
RECHARGE OR REFRESH
VRCH
tDGL1(RCH)
Recharge detection threshold –
normal temp
Recharge detection threshold –
hot temp
Deglitch time, recharge threshold
detected
VIN = 5 V; VTS = 0.5 V;
VOUT: 4.25 V → VRCH (bq25100);
VOUT: 4.35 V → VRCH (bq25100A);
VOUT: 4.40 V → VRCH (bq25100H)
VIN = 5 V; VTS = 0.2 V;
VOUT: 4.15 V → VRCH (bq25100);
VOUT: 4.25 V → VRCH (bq25100H)
VIN = 5 V; VTS = 0.5 V;
VOUT: 4.25 V → 3.5V in 1 μs;
tDGL(RCH) is time to ISET ramp
VO(REG) VO(REG)–0.0 VO(REG)–0.0
–0.125
95
75
V
VO_HT(REG)
–0.130
VO_HT(REG)
–0.105
VO_HT(REG)
–0.080
V
29
ms
6
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