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| BQ20Z80-V102 Datasheet, PDF (6/24 Pages) Texas Instruments – SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK-TM TECHNOLOGY FOR USE WITH THE bq29312A | |||
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bq20z80-V102
SLUS681A â NOVEMBER 2005 â REVISED MARCH 2006
DATA FLASH MEMORY CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = â40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tDR
Data retention
Flash programming write-cycles
See (1)
See (1)
t(WORDPROG) Word programming time
I(DDPROG) Flash-write supply current
See (1)
See (1)
(1) Assured by design. Not production tested
REGISTER BACKUP
VDD = 3 V to 3.6 V, TA = â40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
I(RBI) RBI data-retention input current
V(RBI) RBI data-retention voltage(1)
V(RBI) > 3 V, VDD < VIT
(1) Specified by design. Not production tested.
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MIN
10
20,000
TYP MAX UNIT
Years
Cycles
2 ms
8
15 mA
MIN TYP MAX UNIT
10 100 nA
1.3
V
6
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