BQ2085-V1P3 Datasheet, PDF (6/57 Pages) Texas Instruments – SBS-COMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311

bq2085-V1P3
SLUS598 − FEBRUARY 2004
www.ti.com
SMBUS TIMING SPECIFICATIONS
VDD = 3.0 V to 3.6 V, TA = −20°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
FSMB
FMAS
TBUF
THD:STA
TSU:STA
TSU:STO
THD:DAT
SMBus operating frequency
SMBus master clock frequency
Bus free time between start and stop
Hold time after (repeated) start
Repeated start setup time
Stop setup time
Data hold time
Slave mode, SMBC 50% duty cycle
Master mode, no clock low slave extend
Receive mode
Transmit mode
10
51.2
4.7
4.0
4.7
4.0
0
300
100 kHz
kHz
µs
µs
µs
µs
ns
TSU:DAT
TTIMEOUT
Data setup time
Error signal/detect
See ⁽¹⁾
250
ns
25
35 ms
TLOW
THIGH
TLOW:SEXT
TLOW:MEXT
Clock low period
Clock high period
Cumulative clock low slave extend time
Cumulative clock low master extend time
See ⁽²⁾
See ⁽³⁾
See ⁽⁴⁾
4.7
µs
4.0
50 µs
25 ms
10 ms
TF
Clock/data fall time
See ⁽⁵⁾
300 ns
TR
Clock/data rise time
See ⁽⁶⁾
1000 ns
(1) _{The bq2085−V1P3 times out when any clock low exceeds TTIMEOUT}
(2) _{THIGH Max. is minimum bus idle time. SMBC = 1 for t > 50 µs causes reset of any transaction involving bq2085−V1P3 that is in progress.}
(3) _{TLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.}
(4) _{TLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.}
(5) _{Rise time TR = (VILMAX − 0.15 V) to (VIHMIN + 0.15 V).}
(6) _{Fall time TF = 0.9 VDD to (VILMAX − 0.15 V).}
DATA FLASH MEMORY SWITCHING CHARACTERISTICS
VDD = 3.0 V to 3.6 V, TA = −20°C to 85°C (unless otherwise noted)
PARAMETER
t(RETENSION) Data retention
Flash programming write-cycles
t(WORDPROG) Word programming time
I(DDPROG)
Flash-write supply current
(1) _{Specified by design. Not production tested.}
TEST CONDITIONS
See ⁽¹⁾
See ⁽¹⁾
See ⁽¹⁾
See ⁽¹⁾
MIN TYP MAX UNIT
10
105
Years
Cycles
2 ms
14
16 mA
Register Backup
PARAMETER
I(RBI)
RBI data-retention input current ⁽¹⁾
V(RBI)
RBI data-retention voltage
(1) _{Specified by design. Not production tested.}
TEST CONDITIONS
VRB > 3.0 V, VDD < VIT
MIN TYP MAX UNIT
10 100 nA
1.3
V
6