OPA4171-Q1 Datasheet, PDF (5/35 Pages) Texas Instruments – OPAx171-Q1 36-V, Single-Supply, General-Purpose Operational Amplifier

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OPA171-Q1, OPA2171-Q1, OPA4171-Q1
SBOS556B – JUNE 2011 – REVISED DECEMBER 2014
6.2 ESD Ratings
OPA171-Q1 IN DBV PACKAGE
V_(ESD) Electrostatic discharge
Human body model (HBM), per AEC Q100-002⁽¹⁾
Charged device model (CDM), per AEC Q100-011
OPA2171-Q1 IN D PACKAGE AND OPA4171-Q1 IN D AND PW PACKAGES
V_(ESD)
Human body model (HBM), per AEC Q100-002⁽¹⁾
Electrostatic discharge
Charged device model (CDM), per AEC Q100-011
VALUE
±4000
±500
±2000
±1000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Supply voltage (V+ – V–)
Specified temperature
MIN
4.5 (±2.25)
–40
NOM
MAX
36 (±18)
125
UNIT
V
°C
6.4 Thermal Information — OPA171-Q1 and OPA2171-Q1
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
THERMAL METRIC⁽¹⁾
Junction-to-ambient thermal resistance
Junction-to-case(top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
OPA171-Q1
DBV
5 PINS
277.3
193.3
121.2
51.8
109.5
OPA2171-Q1
D
8 PINS
116.1
69.8
56.6
22.5
56.1
UNIT
°C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Thermal Information — OPA4171-Q1
THERMAL METRIC⁽¹⁾
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
Junction-to-ambient thermal resistance
Junction-to-case(top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
OPA4171-Q1
D
PW
14 PINS
14 PINS
93.2
106.9
51.8
24.4
49.4
59.3
13.5
0.6
42.2
54.3
UNIT
°C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.6 Electrical Characteristics
At T_A = 25°C, V_S = 2.7 to 36 V, V_CM = V_OUT = V_S / 2, and R_LOAD = 10 kΩ connected to V_S / 2, unless otherwise noted. The
specified temperature range is T_A = –40°C to 125°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFFSET VOLTAGE
V_OS
Input offset voltage
Input offset voltage over temperature
0.25
±1.8 mV
0.3
±2 mV
dV_OS/dT
Input offset voltage drift (over
temperature)
0.3
±2⁽¹⁾ µV/°C
PSRR
Input offset voltage over temperature
vs power supply
V_S = 4 to 36 V
1
±3 µV/V
Channel separation, DC
5
µV/V
(1) Not production tested.
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