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DAC8811_15 Datasheet, PDF (5/29 Pages) Texas Instruments – DAC8811 16-Bit, Serial Input Multiplying Digital-to-Analog Converter
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7 Specifications
DAC8811
SLAS411C – NOVEMBER 2004 – REVISED OCTOBER 2015
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
Input voltage
Digital input voltage
Reference voltage, VREF
Operating temperature range
VDD to GND
V (IOUT) to GND
GND
RFB to GND
–0.3
7
V
–0.3
VDD + 0.3
V
–0.3
VDD + 0.3
V
–25
25
V
–40
105
°C
Junction temperature range, TJ
Storage temperature range, Tstg
125
°C
–65
150
(1) Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
7.2 ESD Ratings
V(ESD) Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged device model (CDM), per JEDEC specification JESD22-
C101 (2)
MAX
±4000
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Supply voltage to GND
Operating ambient temperature, TA
MIN
NOM
MAX
2.7
5.5
–40
125
UNIT
V
UNIT
V
°C
7.4 Thermal Information
THERMAL METRIC(1)
DAC8811
DGK (VSSOP) DRB (VSON)
UNIT
8 PINS
8 PINS
RθJA
RθJC(top)
RθJB
ψJT
ψJB
RθJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
169.6
64.2
90.3
7.7
88.8
N/A
46.7
°C/W
61.3
°C/W
22
°C/W
1.1
°C/W
22.1
°C/W
3.8
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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