CSD16340Q3 Datasheet, PDF (5/9 Pages) Texas Instruments – N-Channel NexFET™ Power MOSFETs

CSD16340Q3
www.ti.com
SLPS247A – DECEMBER 2009 – REVISED JANUARY 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(T_A = 25°C unless otherwise stated)
1.6
1.4 ^{ID = 20A}
V_GS = 4.5V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−75
−25
25
75
125
175
T_C − Case Temperature − °C
G007
Figure 8. Normalized On Resistance vs. Temperature
100
10
1
T_C = 125°C
0.1
0.01
T_C = 25°C
0.001
0.0001
0.0
0.2
0.4
0.6
0.8
V_SD − Source to Drain Voltage − V
Figure 9. Typical Diode Forward Voltage
1.0
G008
1k
100
100ms
10
1
Area Limited
by R_DS(on)
0.1
Single Pulse
0.01 ^{Typical RqJA = 138°C/W (min Cu)}
0.01
0.1
1
1ms
10ms
100ms
DC
10
100
V_D − Drain Voltage − V
G009
Figure 10. Maximum Safe Operating Area
1k
100
T_C = 25°C
T_C = 125°C
10
1
0.01
0.1
1
10
100
t_(AV) − Time in Avalanche − ms
G010
Figure 11. Single Pulse Unclamped Inductive Switching
80
70
60
50
40
30
20
10
0
−50 −25 0
25 50 75 100 125 150 175
T_C − Case Temperature − °C
G011
Figure 12. Maximum Drain Current vs. Temperature
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