CSD16340Q3 Datasheet, PDF (1/9 Pages) Texas Instruments – N-Channel NexFET™ Power MOSFETs

CSD16340Q3
www.ti.com
SLPS247A – DECEMBER 2009 – REVISED JANUARY 2010
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16340Q3
FEATURES
1
•2 Optimized for 5V Gate Drive
• Resistance Rated at V_GS = 2.5V
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3mm x 3.3mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
• Optimized for Control or Synchronous FET
Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and optimized
for 5V gate drive applications.
Top View
S1
8D
S2
7D
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
25
V
Q_g
Gate Charge Total (4.5V)
6.5
nC
Q_gd
Gate Charge Gate to Drain
1.2
nC
V_GS = 2.5V
6.1 mΩ
R_DS(on) Drain to Source On Resistance V_GS = 4.5V
4.3 mΩ
V_GS = 8V
3.8 mΩ
V_th
Threshold Voltage
0.85
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD16340Q3
SON 3.3 × 3.3
Plastic Package
13-inch
reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 40A, L = 0.1mH, R_G = 25Ω
VALUE
25
+10 / –8
60
21
115
3
–55 to 150
80
UNIT
V
V
A
A
A
W
°C
mJ
S3
D
G4
6D
5D
P0095-01
(1) Typical R_θJA = 39°C/W on 1in² Cu (2 oz.) on 0.060" thick FR4
PCB.
(2) Pulse width ≤300μs, duty cycle ≤2%
R_DS(ON) vs V_GS
16
14
I_D = 20A
12
10
8
T_C = 125°C
6
4
2
T_C = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS − Gate to Source Voltage − V
G006
Gate Charge
8
7
I_D = 20A
V_DS = 12.5V
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Qg − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated