BQ24610 Datasheet, PDF (5/33 Pages) Texas Instruments – Stand-Alone Synchronous Switch-Mode Li-Ion or Li-Polymer Battery Charger with System Power Selector and Low Iq

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bq24610
bq24617
SLUS892 – DECEMBER 2009
ELECTRICAL CHARACTERISTICS (continued)
5.0V ≤ V(VCC) ≤ 28V, 0°C < T_J < +125°C, typical values are at T_A = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
CHARGE TERMINATION
K_TERM
Termination current set factor (Amps of
termination current per volt on ISET2
pin)
R_SENSE = 10 mΩ
1
A/V
Termination current accuracy
Deglitch time for termination (both edge)
V_ITERM = 20 mV
V_ITERM = 5 mV
V_ITERM = 1.5 mV
–4%
–25%
–45%
4%
25%
45%
100
ms
t_QUAL
Termination qualification time
I_QUAL
Termination qualification current
INPUT CURRENT REGULATION
V_BAT>V_RECH and I_CHG<I_TERM
Discharge current once termination is detected
250
ms
2
mA
V_ACSET
V_{IREG_DPM}
ACSET Voltage Range
ACP-ACN Current Sense Voltage
Range
V_{IREG_DPM} = V_ACP – V_ACN
2
V
100 mV
K_ACSET
Input current set factor (amps of input
current per volt on ACSET pin)
R_SENSE = 10 mΩ
5
A/V
I_ACSET
Input current regulation accuracy
leakage current in to ACSET pin
V_{IREG_DPM} = 40 mV
V_{IREG_DPM} = 20 mV
V_{IREG_DPM} = 5 mV
I_ISET1
Leakage current in to ACSET pin
V_ACSET = 2 V
INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO)
–3%
–4%
–25%
3%
4%
25%
100 nA
V_UVLO
AC Under-voltage rising threshold
V_{UVLO_HYS}
AC Under-voltage hysteresis, falling
VCC LOWV COMPARATOR
Measure on VCC
3.65 3.85
350
4
V
mV
Falling threshold, disable charge
Measure on VCC
4.1
V
Rising threshold, resume charge
4.35
4.5
V
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
V_{SLEEP _FALL}
V_{SLEEP_HYS}
SLEEP falling threshold
SLEEP hysteresis
SLEEP rising delay
V_VCC – V_SRN to enter SLEEP
VCC falling below SRN, Delay to turn off ACFET
40
100
150 mV
500
mV
1
μs
SLEEP falling delay
VCC rising above SRN, Delay to turn on ACFET
30
μs
SLEEP rising shutdown deglitch
VCC falling below SRN, Delay to enter SLEEP mode
100
ms
SLEEP falling powerup deglitch
VCC rising above SRN, Delay to exit SLEEP mode
30
ms
ACN / SRN COMPARATOR
V_{ACN-SRN_FALL}
V_{ACN-SRN_HYS}
ACN to SRN falling threshold
ACN to SRN rising hysteresis
ACN to SRN rising deglitch
ACN to SRN falling deglitch
BAT LOWV COMPARATOR
V_ACN – V_SRN to turn on BATFET
V_ACN – V_SRN > V_{ACN-SRN_RISE}
V_ACN – V_SRN < V_{ACN-SRN_FALL}
100
200
310 mV
100
mV
2
ms
50
μs
V_LOWV
Precharge to fastcharge transition
(LOWV threshold)
Measured on VFB pin, Rising
1.534 1.55 1.566
V
V_{LOWV_HYS}
LOWV hysteresis
LOWV rising deglitch
LOWV falling deglitch
RECHARGE COMPARATOR
VFB falling below V_LOWV
VFB rising above V_LOWV + V_{LOWV_HYS}
100
mV
25
ms
25
ms
V_RECHG
Recharge threshold (with-respect-to
V_REG)
Recharge rising deglitch
Recharge falling deglitch
Measured on VFB pin, Falling
VFB decreasing below V_RECHG
VFB decreasing above V_RECHG
35
50
65 mV
10
ms
10
ms
Copyright © 2009, Texas Instruments Incorporated
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