BQ24153 Datasheet, PDF (5/40 Pages) Texas Instruments – Fully Integrated Switch-Mode One-Cell Li-Ion Charger With Full USB Compliance and USB-OTG Support

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bq24153
bq24156, bq24158
SLUSA27 – MARCH 2010
ELECTRICAL CHARACTERISTICS
Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), T_J = –40°C to 125°C, T_J = 25°C for typical values
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
INPUT CURRENTS
I_(VBUS)
I_{(vbus_leak)}
V_BUS > V_BUS(min), PWM switching
V_BUS supply current control
V_BUS > V_BUS(min), PWM NOT switching
0°C < T_J < 85°C, CD=1 or HZ_MODE=1
Leakage current from battery to VBUS pin
0°C < T_J < 85°C, V_(CSOUT) = 4.2 V, High Impedance
mode, V_BUS=0 V
Battery discharge current in High
Impedance mode, (CSIN, CSOUT, SW pins)
0°C < T_J < 85°C, V_(CSOUT) = 4.2 V, High Impedance
mode, V_(BUS) = 0 V, SCL, SDA, OTG = 0 V
or 1.8 V
VOLTAGE REGULATION
V_(OREG)
Output regulation voltage progrmmable
range
Operating in voltage regulation, programmable
Voltage regulation accuracy
T_A = 25°C
CURRENT REGULATION (FAST CHARGE)
I_O(CHARGE)
Output charge current programmable range
Low charge current
Regulation accuracy of the voltage across
R_(SNS) (for charge current regulation)
V_(IREG) = I_O(CHARGE) × R_(SNS)
WEAK BATTERY DETECTION
V_(LOWV)
Weak battery voltage threshold
programmable range
Weak battery voltage accuracy
Hysteresis for V_(LOWV)
Deglitch time for weak battery threshold
CD, OTG and SLRST PIN LOGIC LEVEL
V_IL
Input low threshold level
V_IH
Input high threshold level
I_(bias)
Input bias current
CHARGE TERMINATION DETECTION
I_(TERM)
Termination charge current programmable
range
Deglitch time for charge termination
Regulation accuracy for termination current
across R_(SNS)
V_{(IREG_TERM)} = I_O(TERM) × R_(SNS)
bq24153, V_(LOWV) ≤ V_(CSOUT) < V_(OREG),
VBUS > V_(SLP), R_(SNS) = 68 mΩ, LOW_CHG=0,
Programmable
bq24156, V_(LOWV) ≤ V_(CSOUT) < V_(OREG),
VBUS > V_(SLP), R_(SNS) = 68 mΩ, LOW_CHG=0,
Programmable
V_LOWV ≤ V_CSOUT < V_OREG, V_BUS>V_SLP, R_SNS=68 mΩ,
LOW_CHG=1
37.4 mV ≤ V_(IREG)< 44.2mV
44.2 mV ≤ V_(IREG)
Adjustable using I²C control
Battery voltage falling
Rising voltage, 2-mV over drive, t_RISE = 100 ns
Voltage on control pin is 5 V
V_(CSOUT) > V_(OREG) – V_(RCH),
VBUS > V_(SLP), R_(SNS) = 68 mΩ, Programmable
Both rising and falling, 2-mV overdrive,
t_RISE, t_FALL = 100 ns
3.4 mV ≤ V_{(IREG_TERM)} ≤ 6.8 mV
6.8 mV < V_{(IREG_TERM)} ≤ 17 mV
17 mV < V_{(IREG_TERM)} ≤ 27.2 mV
MIN TYP MAX UNIT
10
mA
5
15
23 mA
5 mA
23 mA
3.5
–0.5%
–1%
4.44
V
0.5%
1%
550
550
–3.5%
-3%
1250 mA
1550 mA
325
350 mA
3.5%
3%
3.4
–5%
100
30
3.7
V
5%
mV
ms
0.4
V
1.3
V
1.0 µA
50
–15%
–10%
–5.5%
400 ^mA
30
ms
15%
10%
5.5%
Copyright © 2010, Texas Instruments Incorporated
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