BQ24100_08 Datasheet, PDF (5/38 Pages) Texas Instruments – SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH INTEGRATED POWER FETs (bqSWITCHER™)

bq24100, bq24103, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
ELECTRICAL CHARACTERISTICS (continued)
T_J = 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
SLEEP COMPARATOR
V_SLP-ENT Sleep-mode entry threshold
2.3 V ≤ V_I(OUT) ≤ V_OREG, for 1 or 2 cells
V_I(OUT) = 12.6 V, R_IN = 1 kΩ
bq24105/15 ⁽¹⁾
V_CC ≤ V_IBAT
+5 mV
V_CC ≤ V_IBAT
-4 mV
V_SLP-EXIT Sleep-mode exit hysteresis,
2.3 V ≤ V_I(OUT)≤ V_OREG
40
V_CC decreasing below threshold,
t_FALL = 100 ns, 10-mV overdrive,
PMOS turns off
t_dg-SLP
Deglitch time for sleep mode
V_CC decreasing below threshold,
t_FALL = 100 ns, 10-mV overdrive,
20
STATx pins turn off
UVLO
V_UVLO-ON
PWM
IC active threshold voltage
IC active hysteresis
V_CC rising
V_CC falling
3.15
120
Internal P-channel MOSFET on-resistance ^{7 V ≤ VCC ≤ VCC(max)}
4.5 V ≤ V_CC ≤ 7 V
Internal N-channel MOSFET on-resistance ^{7 V ≤ VCC ≤ VCC(max)}
4.5 V ≤ V_CC ≤ 7 V
f_OSC
Oscillator frequency
Frequency accuracy
–9%
D_MAX
Maximum duty cycle
D_MIN
Minimum duty cycle
0%
t_TOD
Switching delay time (turn on)
t_syncmin
Minimum synchronous FET on time
Synchronous FET minimum current-off
threshold ⁽²⁾
50
BATTERY DETECTION
I_DETECT
Battery detection current during time-out
fault
V_I(BAT) < V_OREG – V_RCH
I_DISCHRG1
t_DISCHRG1
I_WAKE
t_WAKE
Discharge current
Discharge time
Wake current
Wake time
I_DISCHRG2 Termination discharge current
t_DISCHRG2 Termination time
OUTPUT CAPACITOR
V_SHORT < V_I(BAT) < V_OREG – V_RCH
V_SHORT < V_I(BAT) < V_OREG – V_RCH
V_SHORT < V_I(BAT) < V_OREG – V_RCH
V_SHORT < V_I(BAT) < V_OREG – V_RCH
Begins after termination detected,
V_I(BAT) ≤ V_OREG
Required output ceramic capacitor range
C_OUT
from SNS to PGND, between inductor and
4.7
R_SNS
C_SNS
Required SNS capacitor (ceramic) at SNS
pin
PROTECTION
V_OVP
OVP threshold voltage
Threshold over V_OREG to turn off P-channel
MOSFET, STAT1, and STAT2 during charge
110
or termination states
I_LIMIT
V_SHORT
I_SHORT
T_SHTDWN
Cycle-by-cycle current limit
Short-circuit voltage threshold, BAT
Short-circuit current
Thermal trip
Thermal hysteresis
V_I(BAT) falling
V_I(BAT) ≤ V_SHORT
2.6
1.95
35
TYP
MAX UNIT
V_CC ≤ V_IBAT
+75 mV
V
V_CC ≤ V_IBAT
+73 mV
160
mV
5
µs
30
40
ms
3.30
3.50
V
150
mV
400
500
mΩ
130
150
1.1
MHz
9%
100%
20
ns
60
ns
400
mA
2
mA
400
µA
1
s
2
mA
0.5
s
400
µA
262
ms
10
47
µF
0.1
µF
117
121 %V_O(REG)
3.6
4.5
A
2
2.05 V/cell
65
mA
165
°C
10
°C
(1) For bq24105 and bq24115 only. R_IN is connected between IN and PGND pins and needed to ensure sleep entry.
(2) N-channel always turns on for ~60 ns and then turns off if current is too low.
Copyright © 2004–2008, Texas Instruments Incorporated
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115