BQ24100_08 Datasheet, PDF (4/38 Pages) Texas Instruments – SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH INTEGRATED POWER FETs (bqSWITCHER™)

bq24100, bq24103, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
T_J = 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TEST CONDITIONS
t
I_OPRECHG
V_(ISET2)
K_(ISET2)
Deglitch time for precharge to fast charge
transition,
Precharge range
Precharge set voltage, ISET2
Precharge current set factor
Rising voltage;
t_RISE, t_FALL = 100 ns, 2-mV overdrive
V_I(BAT) < V_LOWV, t < t_PRECHG
V_I(BAT) < V_LOWV, t < t_PRECHG
100 mV ≤ V_IREG-PRE ≤ 100 mV,
MIN
TYP
20
30
15
100
1000
MAX
40
200
UNIT
ms
mA
mV
V/A
VIREG_*PRE
+
0.1V
RSET2
1000,
V_IREG-PRE Voltage regulated across R_SNS-Accuracy
(PGM) Where
1.2 kΩ ≤ RSET2 ≤ 10 kΩ, Select RSET1
to program V_IREG-PRE,
V_IREG-PRE (Measured) = I_OPRE-CHG × R_SNS
(–20% to 20% excludes errors due to RSET1
and R_SNS tolerances)
CHARGE TERMINATION (CURRENT TAPER) DETECTION
I_TERM
V_TERM
Charge current termination detection range
Charge termination detection set voltage,
ISET2
V_I(BAT) > V_RCH
V_I(BAT) > V_RCH
K_(ISET2)
Termination current set factor
Charger termination accuracy
V_I(BAT) > V_RCH
t_dg-TERM
Deglitch time for charge termination
Both rising and falling,
2-mV overdrive t_RISE, t_FALL = 100 ns
TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR
%_LTF
%_HTF
%_TCO
Cold temperature threshold, TS, % of bias
Hot temperature threshold, TS, % of bias
Cutoff temperature threshold, TS, % of
bias
V_LTF = V_O(VTSB) × % LTF/100
V_HTF = V_O(VTSB) × % HTF/100
V_TCO = V_O(VTSB) × % TCO/100
LTF hysteresis
t_dg-TS
Deglitch time for temperature fault, TS
Deglitch time for temperature fault, TS,
bq24109, bq24104
Both rising and falling,
2-mV overdrive t_RISE, t_FALL = 100 ns
V_O(VTSB) TS bias output voltage
V_O(VTSB) TS bias voltage regulation accuracy
BATTERY RECHARGE THRESHOLD
V_CC > V_IN(min),
I_(VTSB) = 10 mA 0.1 µF ≤ C_O(VTSB) ≤ 1 µF
V_CC > _IN(min),
I_(VTSB) = 10 mA 0.1 µF ≤ C_O(VTSB) ≤ 1 µF
V_RCH
Recharge threshold voltage
t_dg-RCH
Deglitch time
STAT1, STAT2, AND PG OUTPUTS
Below V_OREG
V_I(BAT) < decreasing below threshold,
t_FALL = 100 ns 10-mV overdrive
V_OL(STATx) Low-level output saturation voltage, STATx
V_OL(PG)
Low-level output saturation voltage, PG
CE CMODE, CELLS INPUTS
I_O = 5 mA
I_O = 10 mA
V_IL
Low-level input voltage
V_IH
High-level input voltage
TTC INPUT
I_IL = 5 µA
I_IH = 20 µA
t_PRECHG
t_CHARGE
K_TTC
C_TTC
V_{TTC_EN}
Precharge timer
Programmable charge timer range
Charge timer accuracy
Timer multiplier
Charge time capacitor range
TTC enable threshold voltage
t_(CHG) = C_(TTC) × K_(TTC)
0.01 µF ≤ C_(TTC) ≤ 0.18 µF
V_(TTC) rising
–20%
20%
15
–20%
20
100
1000
30
72.8%
33.7%
28.7%
0.5%
20
73.5%
34.4%
29.3%
1%
30
500
3.15
–10%
75
100
20
30
0
1.3
1440
25
-10%
0.01
1800
2.6
200
200
mA
mV
V/A
20%
40
ms
74.2%
35.1%
29.9%
1.5%
40
ms
V
10%
125 mV/cell
40
ms
0.5
V
0.1
0.4
V
V_CC
2160
572
10%
0.22
s
minutes
min/nF
µF
mV
4
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