LM3S8530 Datasheet, PDF (486/526 Pages) Texas Instruments – Stellaris® LM3S8530 Microcontroller

Electrical Characteristics
19.1.3
19.1.4
19.1.5
Table 19-2. Recommended DC Operating Conditions (continued)
Parameter Parameter Name
Min
I_OH
High-level source current, V_OH=2.4 V
2-mA Drive
2.0
4-mA Drive
4.0
8-mA Drive
8.0
I_OL
Low-level sink current, V_OL=0.4 V
2-mA Drive
2.0
4-mA Drive
4.0
8-mA Drive
8.0
a. V_OL and V_OH shift to 1.2 V when using high-current GPIOs.
Nom
Max
-
-
-
-
-
-
-
-
-
-
-
-
On-Chip Low Drop-Out (LDO) Regulator Characteristics
Unit
mA
mA
mA
mA
mA
mA
Table 19-3. LDO Regulator Characteristics
Parameter Parameter Name
Min
Nom
Max
Unit
V_LDOOUT
Programmable internal (logic) power supply
2.25
2.5
2.75
V
output value
Output voltage accuracy
-
2%
-
%
t_PON
Power-on time
-
-
100
µs
t_ON
Time on
-
-
200
µs
t_OFF
Time off
-
-
100
µs
V_STEP
Step programming incremental voltage
-
50
-
mV
C_LDO
External filter capacitor size for internal power
1.0
-
3.0
µF
supply
GPIO Module Characteristics
Table 19-4. GPIO Module DC Characteristics
Parameter
R_GPIOPU
R_GPIOPD
Parameter Name
GPIO internal pull-up resistor
GPIO internal pull-down resistor
Min
Nom
Max
Unit
50
-
110
kΩ
55
-
180
kΩ
Power Specifications
The power measurements specified in the tables that follow are run on the core processor using
SRAM with the following specifications (except as noted):
■ V_DD = 3.3 V
■ V_DD25 = 2.50 V
■ V_DDA = 3.3 V
■ V_DDPHY = 3.3 V
■ Temperature = 25°C
486
June 22, 2010
Texas Instruments-Production Data