MSP430X20X1 Datasheet, PDF (47/80 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430x20x1, MSP430x20x2, MSP430x20x3
MIXED SIGNAL MICROCONTROLLER
SLAS491A − AUGUST 2005 − REVISED OCTOBER 2005
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
Flash Memory
PARAMETER
TEST CONDITIONS VCC
MIN TYP MAX UNIT
VCC(PGM/
ERASE)
fFTG
IPGM
IERASE
tCPT
tCMErase
Program and Erase supply voltage
Flash Timing Generator frequency
Supply current from VCC during program
Supply current from VCC during erase
Cumulative program time (see Note 1)
Cumulative mass erase time
Program/Erase endurance
2.2
3.6 V
257
476 kHz
2.2 V/3.6 V
1
5 mA
2.2 V/3.6 V
1
7 mA
2.2 V/3.6 V
10 ms
2.2 V/3.6 V
20
104 105
ms
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
30
tBlock, ₀
Block program time for 1st byte or word
25
tBlock, _1-63
tBlock, _End
Block program time for each additional byte or word
Block program end-sequence wait time
see Note 2
18
6
tFTG
tMass _Erase Mass erase time
10593
tSeg _Erase Segment erase time
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller’s state machine (tFTG = 1/fFTG).
RAM
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
V(RAMh)
RAM retention supply voltage (see Note 1)
CPU halted
1.6
V
NOTE 1: This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
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