TPS54283 Datasheet, PDF (4/52 Pages) Texas Instruments – 2-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET

TPS54283, TPS54286
SLUS749C – JULY 2007 – REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS (continued)
–40°C ≤ T_J ≤ +125°C, V_PVDD1 = V_PVDD2 = 12 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
BOOTSTRAP
R_BOOT1
R_BOOT2
Bootstrap switch resistance
OUTPUT STAGE (Channel 1 and Channel 2)
From BP to BOOT1 or BP to BOOT2,
I_EXT = 50 mA
R_DS(on) ⁽³⁾
t_ON(min) ⁽³⁾
MOSFET on resistance plus bond wire resistance
Minimum controllable pulse width
T_J = +25°C, V_PVDD2 = 8 V
–40°C < T_J < +125°C, V_PVDD2 = 8 V
I_SWx peak current > 1 A⁽⁴⁾
D_MIN
Minimum Duty Cycle
V_FB = 0.9 V
D_MAX
Maximum Duty Cycle
TPS54283 f_SW = 300 kHz
TPS54286 f_SW = 600 kHz
I_SW
Switching node leakage current (sourcing)
Outputs OFF
THERMAL SHUTDOWN
T_SD ⁽³⁾
T_SD(hys) ⁽³⁾
Shutdown temperature
Hysteresis
(3) Ensured by design. Not production tested.
(4) See Figure 14 for characteristics for I_SWx peak current < 1 A.
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MIN TYP MAX UNIT
18
Ω
100
mΩ
100
180
100
200 ns
0%
90
95
%
85
90
%
2
12 µA
148
20
°C
4
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