THMC10 Datasheet, PDF (4/20 Pages) Texas Instruments – REMOTE/LOCAL TEMPERATURE MONITOR WITH SMBus INTERFACE

THMC10
REMOTE/LOCAL TEMPERATURE MONITOR
WITH SMBus INTERFACE
SLIS089 – DECEMBER 1999
dc electrical characteristics, V_DD = 3.3 V, T_A = 25°C (unless otherwise noted)
A/D and supply
PARAMETER
TEST CONDITIONS
MIN
T(RES)
Temperature resolution
No missed codes
1
T(ERR1)
Initial temperature error from internal ^{TA = 60°C to 100°C}
diode
TA = full range
–2
–3
T(ERR2)
Initial temperature error from external ^{TA = 60°C to 100°C}
diode (see Note 2)
TA = full range
–2.5
–3.5
V(UVLOCK)
Under voltage lockout voltage
VDD input, disables acquisition, rising edge
2.65
V(POR)
Power-up reset threshold
On VDD input, falling edge
1
I(DD,STANDBY) VDD standby supply current
Logic inputs forced to VDD or GND,
STBY mode, SMBus is static
Logic inputs forced to VDD or GND,
STBY mode, SCLK = 10 kHz
VDD operating supply current (aver- _{Slow auto-aquire rate (0.25 samples/sec)}
IDD
aged over 4 seconds in auto-acquire
mode)
Fast auto-aquire rate (2 samples/sec)
V(D,SOURCE)
I(DLEAK)
I(ADD,BIAS)
I(DIODE)
DXN source voltage
DXP and DXN leakage current
Add {0:1} bias current
Diode source current
STBY = 0, DXP = DXN = 0
Momentary on power up
DXP = 1.5 V, high level
DXP = 1.5 V, low level
I(RATIO)
NOTE 2:
Diode source current ratio
+ ^{ǒ Ǔ} * Based on T(°C)
q DVBE
n k [ln(10)]
273
+ ^{high level}
DXP 1.5 V, _{low level}
9.7
Where
q = 1.6 × 10–19
n = 1.0085
k = 1.38 × 10–23
(charge)
(diode ideality factor)
(Boltzman’s constant)
TYP MAX UNITS
°C
2
°C
3
2.5
°C
3.5
2.8 2.95 V
2.25 2.5 V
3
10 µA
4
µA
40
70
µA
45 180
0.7
V
2 µA
35 100 µA
100
µA
10
10 10.2
SMBus
PARAMETER
VIH
VIL
IOL1
IOL2
II
Input high voltage
Input low voltage
SMBus output low current
ALERT output low current
SMBus input current
TEST CONDITIONS
SDATA = 0.6 V
ALERT = 0.4 V
MIN TYP MAX UNITS
2.2
V
0.8 V
6
mA
1
mA
–1
1 µA
4
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