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SM72295_15 Datasheet, PDF (4/17 Pages) Texas Instruments – SM72295 Photovoltaic Full Bridge Driver
SM72295
SNVS688E – OCTOBER 2010 – REVISED APRIL 2013
www.ti.com
Recommended Operating Conditions
VCCA,VCCB
VDD
SI, SO common mode
HS (1)
HBA, HBB
HS Slew Rate
Junction Temperature
+8V to +14V
+3V to 7V
VDD+1V to 100V
-1V to 100V
HS+7V to HS+14V
<50V/ns
-40°C to +125°C
(1) In the application the HS nodes are clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally
not exceed –1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur, the HS voltage must never be more negative than VCC-15V. For example if VCC = 10V,
the negative transients at HS must not exceed –5V.
Electrical Characteristics(1)
Specifications in standard typeface are for TJ = 25°C, and those in boldface type apply over the full operating junction
temperature range. No load on LO & HO, VCC = 10V, VDD = 5V, HB-HS = 10V, OVS = 0V unless otherwise indicated.
Symbol Parameter
Conditions
Min
Typ
Max
Units
SUPPLY CURRENTS
IDD
VDD Quiescent Current
ICC
VCC Quiescent Current
(ICCA+ICCB)
SIA = SOB, SIB = SOB.
All outputs off
25
40
μA
500
800
μA
ICCO
VCC Operating Current
(ICCA+ICCB)
LOA & LOB switching at 200kHz
2.2
3
mA
IHB
HBA, HBB Quiescent Current All outputs off
IHBO
HBA, HBB Operating Current HOA & HOB switching at 200kHz
IHBS
HBA & HBB to VSS Current,
Quiescent
HS = 100V, HB = 110V
55
200
μA
700
1000
μA
0.1
10
μA
IHBSO
HBA and HBB to VSS Current,
Operating
f = 200kHz
130
μA
PGOOD, OVB OUTPUTs
VOL
Output Low RDS
RPU
VDD pull up resistor
LI ,HI INPUT PINS
25
50
Ω
50
90
kΩ
VIL
Input Voltage Threshold
VIHYS
Input Voltage Hysteresis
RI
LI, HI Pull down Resistance
OVER VOLTAGE SHUTDOWN
1.3
1.8
2.3
V
50
mV
100
200
400
kΩ
VOVR
OVS Rising Threshold
VOVH
OVS threshold Hysteresis
IOVS
OVS input bias current
UNDER VOLTAGE SHUTDOWN
OVS<VDD
VDD-50mV
VDD
5%
1
VDD+50mV
V
VDD
nA
VCCR
VCC Rising Threshold
VCCH
VCC threshold Hysteresis
VHBR
HB-HS Rising Threshold
VHBH
HB-HS Threshold Hysteresis
BOOT STRAP DIODE
6
6.9
7.4
V
0.5
V
5.7
6.6
7.1
V
0.4
V
VDH
High-Current Forward Voltage IVCC-HB = 100mA
RD
Dynamic Resistance
IVCC-HB = 100mA
0.8
1
V
1
1.65
Ω
(1) Min and Max limits are 100% production tested at 25ºC. Limits over the operating temperature range are ensured through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
4
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