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| UM6K31N Datasheet, PDF (3/6 Pages) Texas Instruments – 2.5V Drive Nch + Nch MOSFET | |||
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UM6K31N
ï¬Electrical characteristic curves
0.5
Ta= 25ï°C
Pulsed
0.4
VGS= 10V
0.3
VGS= 4.5V
VGS= 4.0V
0.2
0.1
0
0
VGS= 2.8V
VGS= 2.5V
0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics(á¶)
Data Sheet
0.5
VGS= 10V
0.4
VGS= 4.5V
VGS= 4.0V
Ta= 25ï°C
Pulsed
0.3
VGS= 2.8V
0.2
0.1
VGS= 2.5V
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.2 Typical Output Characteristics(á¶)
1
0.1
0.01
VDS= 10V
Pulsed
Ta=125ï°C
Ta=75ï°C
Ta=25ï°C
Ta= -25ï°C
0.001
0.0001
0
1
2
3
GATE-SOURCE VOLTAGE : V GS[V]
Fig.3 Typical Transfer Characteristics
100
Ta= 25ï°C
Pulsed
10
1
VGS= 2.5V
VGS= 4.0V
VGS= 4.5V
VGS= 10V
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(á¶)
100
VGS= 10V
Pulsed
10
1
Ta=125ï°C
Ta=75ï°C
Ta=25ï°C
Ta= -25ï°C
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(á¶)
100
VGS= 4.5V
Pulsed
10
1
Ta=125ï°C
Ta=75ï°C
Ta=25ï°C
Ta= -25ï°C
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(á¶)
100
VGS= 4.0V
Pulsed
10
Ta=125ï°C
Ta=75ï°C
Ta=25ï°C
Ta= -25ï°C
1
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(á¶)
100
VGS= 2.5V
Pulsed
10
Ta=125ï°C
Ta=75ï°C
Ta=25ï°C
Ta= -25ï°C
1
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(á¶)
1
VDS= 10V
Pulsed
0.1
Ta= -25ï°C
Ta=25ï°C
Ta=75ï°C
Ta=125ï°C
0.01
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
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âc 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.A
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