UM6K31N Datasheet, PDF (1/6 Pages) Texas Instruments – 2.5V Drive Nch + Nch MOSFET

2.5V Drive Nch + Nch MOSFET
UM6K31N
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(UMT6).
3) Low voltage drive(2.5V drive).
Dimensions (Unit : mm)
UMT6
(SC-88)
<SOT-363>
(6) (5) (4)
Application
Switching
(1) (2) (3)
Abbreviated symbol : K31
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Packaging specifications
Package
Type _Code
Taping
TN
Basic ordering unit (pieces) 3000
UM6K31N

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Absolute maximum ratings (Ta = 25C)
Parameter
Symbol

Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
P_D ^*2
60
20
250
1
125
1
150
120
Channel temperature
Tch
150
Range of storage temperature
Tstg 55 to +150
Inner circuit
(6)
(5)
(4)
∗1
∗2
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V
V
mA
A
mA
A
mW / TOTAL
mW / ELEMENT
C
C
∗2
(1) Tr1 SOURCE
(2) Tr1 GATE
(3) Tr2 DRAIN
(4) Tr2 SOURCE
(5) Tr2 GATE
(6) Tr1 DRAIN
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
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Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a)^*
Limits
833
1042
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Unit
°C / W /TOTAL
°C / W /ELEMENT
* Each terminal mounted on a recommended land.
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2010.04 - Rev.A