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TPIC6596 Datasheet, PDF (3/10 Pages) Texas Instruments – POWER LOGIC 8-BIT SHIFT REGISTER
schematic of inputs and outputs
VCC
EQUIVALENT OF EACH INPUT
Input
25 V
LGND
12 V
TPIC6596
POWER LOGIC 8-BIT SHIFT REGISTER
SLIS096 – APRIL 2000
TYPICAL OF ALL DRAIN OUTPUTS
45 V
DRAIN
LGND
12 V
PGND
absolute maximum ratings over recommended operating case temperature range (unless
otherwise noted)†
Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Continuous source-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed source-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Pulsed drain current, each output, all outputs on, IDn, TA = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . 750 mA
Continuous drain current, each output, all outputs on, IDn, TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mA
Peak drain current single output, IDM,TA = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 mJ
Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to LGND and PGND.
2. Each power DMOS source is internally connected to PGND.
3. Pulse duration ≤ 100 µs, duty cycle ≤ 2 %
4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 100 mH, IAS = 1 A (see Figure 4).
PACKAGE
DW
N
DISSIPATION RATING TABLE
TA ≤ 25°C
POWER RATING
1125 mW
1150 mW
DERATING FACTOR
ABOVE TA = 25°C
9.0 mW/°C
9.2 mW/°C
TA = 125°C
POWER RATING
225 mW
230 mW
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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