THS4521-HT_15 Datasheet, PDF (3/27 Pages) Texas Instruments – VERY LOW POWER, NEGATIVE RAIL INPUT,RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER

THS4521-HT
www.ti.com
SBOS548D – APRIL 2011 – REVISED MAY 2012
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
11 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
Al-Cu (0.5%)
BOND PAD
THICKNESS
1380 nm
½
922 mm
½
12
11 ^{10 9 8}
7
6
1
2 34 5
0.0
DISCRIPTION
V_IN-
V_OCM
V_S+
V_S+
V_S+
V_OUT+
V_OUT-
V_S-
V_S-
V_S-
PD
V_IN+
0.0
75.8 mm
Table 1. Bond Pad Coordinates in Microns
PAD NUMBER
1
2
3
4
5
6
7
8
9
10
11
12
X min
80.7
310.6
405.6
500.6
595.6
679.6
679.6
595.6
500.6
405.6
310.6
80.7
Y min
3.7
3.7
3.7
3.7
3.7
137.55
434.7
568.6
568.6
568.6
568.6
568.6
X max
165.7
395.6
490.6
585.6
680.6
764.6
764.6
680.6
585.6
490.6
395.6
165.7
Y max
88.7
88.7
88.7
88.7
88.7
222.55
519.7
653.6
653.6
653.6
653.6
653.6
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