SM74611 Datasheet, PDF (3/11 Pages) Texas Instruments – Smart Bypass Diode

SM74611
www.ti.com
ESD RATINGS
All Pins, Human Body Model (HBM)
All Pins, Charge Model (CDM)
SNVS903 – DECEMBER 2012
>1kV
>250V
ELECTRICAL CHARACTERISTICS⁽¹⁾
SYMBOL
PARAMETER
I_F(AVG)
V_F(AVG)
P_D
Forward Current
Forward Voltage
Power Dissipation
D
Duty Cycle
R_JC
Thermal Resistance, FET Junction to Case
(D2PAK)
I_R
Reverse Leakage Current
TEST CONDITIONS
I_F = 8A
I_F = 8A
I_F = 15A
I_F = 8A
T_J = 25°C
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
V_REVERSE = 28V
T_J = 25°C
T_J = 125°C
MIN TYP MAX UNIT
8
15
A
26
mV
208
450 575
mW
695
1389
99.5
%
96.0
0.5
°C/W
0.3
µA
3.3
(1) Limits appearing in boldface type apply over the entire junction temperature range for operation. Limits appearing in normal type apply
for T_A = T_J = 25°C.
TYPICAL CHARACTERISTICS
100.00
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
0
125ºC
85ºC
25ºC
-40ºC
Average Forward Voltage (Anode to Cathode)
Vs.
Current
2
4
6
8
10
12
14
CURRENT (A)
Figure 2. Average Forward Voltage (Anode to Cathode) Over Temperature
16
C003
Copyright © 2012, Texas Instruments Incorporated
3
Product Folder Links: SM74611