SM74611 Datasheet, PDF (2/11 Pages) Texas Instruments – Smart Bypass Diode

SM74611
SNVS903 – DECEMBER 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
CONNECTION DIAGRAM
DAP
Figure 1. D2PAK
NO.
1,3 ⁽¹⁾
2,DAP ⁽²⁾
Pin
NAME
ANODE
CATHODE
PIN DESCRIPTIONS
DESCRIPTION
Connect both of these pins to the negative side of the PV cells
Pin 2 and the DAP are shorted internally. Connect the DAP to the positive side of the PV cells
(1) Pin 1 and Pin 3 should be connected together for proper operation
(2) Package drawing at the end of datasheet is shown without Pin 2 being trimmed
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
DC Reverse Voltage
Forward Current
Ambient Storage Temperature
30V
15A
-65°C to 125°C
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits
and associated test conditions, see the Electrical Characteristics tables.
RECOMMENDED OPERATING CONDITIONS ⁽¹⁾
DC Reverse Voltage
Junction Temperature Range (T_J)
Forward Current
28V
-40°C to 125°C
0-15A
(1) System must be thermally managed so as not to exceed maximum junction temperature
2
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Product Folder Links: SM74611