OPA2822UG4 Datasheet, PDF (3/33 Pages) Texas Instruments – Dual, Wideband, Low-Noise Operational Amplifier

ELECTRICAL CHARACTERISTICS: V_S = ±6V
Boldface limits are tested at +25°C.
R_F = 402Ω, R_L = 100Ω, and G = +2, (see Figure 1 for AC performance only), unless otherwise noted.
OPA2822U, E
TYP
MIN/MAX OVER TEMPERATURE
PARAMETER
AC PERFORMANCE (see Figure 1)
Small-Signal Bandwidth
Gain-Bandwidth Product
Bandwidth for 0.1dB Gain Flatness
Peaking at a Gain of +1
Large-Signal Bandwidth
Slew Rate
Rise-and-Fall Time
Settling Time to 0.02%
0.1%
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
Input Current Noise
Differential Gain
Differential Phase
Channel-to-Channel Crosstalk
DC PERFORMANCE⁽⁴⁾
Open-Loop Voltage Gain (A_OL)
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Average Bias Current Drift (magnitude)
Input Offset Current
Average Offset Current Drift
INPUT
Common-Mode Input Range (CMIR)⁽⁵⁾
Common-Mode Rejection Ratio (CMRR)
Input Impedance
Differential-Mode
Common-Mode
OUTPUT
Voltage Output Swing
Current Output, Sourcing
Current Output, Sinking
Short-Circuit Current
Closed-Loop Output Impedance
POWER SUPPLY
Specified Operating Voltage
Maximum Operating Voltage Range
Max Quiescent Current
Min Quiescent Current
Power-Supply Rejection Ratio (–PSRR)
THERMAL CHARACTERISTICS
Specified Operating Range U, E Package
Thermal Resistance, θ_JA
U SO-8
E MSOP
CONDITIONS
G = +1, V_O = 0.1V_PP, R_F = 0Ω
G = +2, V_O = 0.1V_PP
G = +10, V_O = 0.1V_PP
G ≥ 20
G = +2, V_O < 0.1V_PP
V_O < 0.1V_PP
G = +2, V_O = 2V_PP
G = +2, 4V Step
G = +2, V_O = 0.2V Step
G = +2, V_O = 2V Step
G = +2, V_O = 2V Step
G = +2, f = 1MHz, V_O = 2V_PP
R_L = 200Ω
R_L ≥ 500Ω
R_L = 200Ω
R_L ≥ 500Ω
f > 10kHz
f > 10kHz
G = +2, PAL, V_O = 1.4Vp, R_L = 150
G = +2, PAL, V_O = 1.4Vp, R_L = 150
f = 1MHz, Input Referred
V_O = 0V, R_L = 100Ω
V_CM = 0V
V_CM = 0V
V_CM = 0V
V_CM = 0V
V_CM = 0V
V_CM = 0V
V_CM = ±1V
V_CM = 0
V_CM = 0
No Load
100Ω Load
V_O = 0, Linear Operation
V_O = 0, Linear Operation
Output Shorted to Ground
G = +2, f = 100kHz
V_S = ±6V, both channels
V_S = ±6V, both channels
Input Referred
Junction-to-Ambient
+25°C
+25°C⁽¹⁾
0°C to
70°C⁽²⁾
–40°C to
+85°C⁽²⁾
MIN/ TEST
UNITS MAX LEVEL⁽³⁾
400
MHz
typ C
200
120
110
105
MHz min B
24
15
13
12
MHz min B
240
150
130
125
MHz min B
16
MHz
typ C
5
dB
typ C
27
MHz
typ C
170
110
105
100
V/µs min B
1.5
ns
typ C
35
ns
typ C
32
ns
typ C
–91
–88
–87
–86
dBc max B
–95
–91
–90
–89
dBc max B
–100
–95
–92
–91
dBc max B
–105
–99
–96
–95
dBc max B
2.0
2.2
2.3
2.5
nV/√Hz max B
1.6
2.0
2.1
2.3
pA/√Hz max B
0.02
%
typ C
0.03
deg
typ C
–95
dBc
typ C
100
±0.2
–9
±100
85
±1.2
–18
±400
±4.8
±4.5
110
85
18  0.6
7  1
±4.9
±4.7
±4.7
±4.5
+150
+90
–150
–90
220
0.01
82
±1.4
5
–19
50
±600
5
±4.4
82
±4.6
±4.4
+85
–85
80
±1.5
5
–21
50
±700
5
dB
min A
mV max A
µV/°C max B
µA
max A
nA/°C max B
nA
max A
nA/°C max B
±4.4
V
min A
80
dB
min A
kΩ || pF typ C
MΩ || pF typ C
±4.6
V
min A
±4.4
V
min A
+80
mA
min A
–80
mA
min A
mA
typ C
Ω
typ C
±6
V
typ C
±6.3
±6.3
±6.3
V
max A
9.6
11.8
11.9
12.0
mA max A
9.6
8.2
8.1
8.0
mA
min A
95
85
82
80
dB
min A
–40 to +85
125
150
°C
typ C
°C/W typ C
°C/W typ C
NOTES: (1) Junction temperature = ambient for +25°C tested specifications.
(2) Junction temperature = ambient at low temperature limit: junction temperature = ambient +23°C at high temperature limit for over temperature tested
specifications.
(3) Test Levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C)
Typical value only for information.
(4) Current is considered positive-out-of node. V_CM is the input common-mode voltage.
(5) Tested < 3dB below minimum CMRR specification at ± CMIR limits.
OPA2822
3
SBOS188E
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